The MT46V32M8TG-75:G is a 256Mb DDR SDRAM memory chip from Quarktwin Technology Ltd., configured as 8 Meg x 8 with four internal banks. It operates at a voltage of +2.5V ±0.2V and supports a cycle time of 7.5ns at a CAS latency of 2, making it suitable for DDR266 applications. The device features a bidirectional data strobe for synchronous data capture and includes options for programmable burst lengths of 2, 4, or 8. It also supports auto refresh and self-refresh modes, with a refresh count of 8192 cycles. The memory is available in a 66-pin TSOP package, which is designed for improved reliability. This part is suitable for commercial temperature ranges from 0°C to +70°C.
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR
Memory Type: Volatile
Memory Size: 256Mb (32M x 8)
Access Time: 750ps
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 66-TSOP
Supply Voltage - Operating: 2.3 V to 2.7 V
Memory Format: DRAM
Max Frequency: 133MHz
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
IC DRAM 256MBIT PARALLEL 66TSOP Product overview: MT46V32M8TG-75:G from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT46V32M8TG-75:G
SDRAM - DDR Memory IC 256Mb (32M x 8) Parallel 133MHz 750ps 66-TSOP
IC DRAM 256MBIT PARALLEL 66TSOP
IC DRAM 256MBIT PARALLEL 66TSOP
SDRAM - DDR Memory IC 256Mbit Parallel 133 MHz 750 ps 66-TSOP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT46V32M8TG-75:G | MT46V32M8TG-75:G-ND | MT46V32M8TG-75:G | MT46V32M8TG-75:G | MT46V32M8TG-75:G | |
| Product Name | Memory - SDRAM - MT46V32M8TG-75:G | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.7500 ns | 0.7500 ns | 0.7500 ns | 0.7500 ns | ||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Package Type | SOP; 66-TSOP | TSSOP; Tray | TSSOP; "66-TSSOP (0.400"", 10.16mm Width)" | SSOP; TSSOP; 66-TSSOP (0.400\", 10.16mm Width) |
