Micron Technology, Inc. Memory MT45W4MW16PFA-85 WT

Description
Description
Datasheet
Datasheet Summary
Powered by GS/AI

The MT45W4MW16PFA-85 WT is a 64Mb asynchronous/page mode memory device from Quarktwin Technology Ltd., featuring a 4 Meg x 16 configuration. It operates with a voltage range of 1.70V to 1.95V for VCC and 1.70V to 3.30V for VCCQ. The device offers random access times of 85ns and supports low power consumption modes, with an asynchronous read current of less than 25mA and a standby current of 120µA, which can be reduced to 100µA in low-power mode. The memory supports a page mode read access with a page size of sixteen words, allowing for intrapage read access times of 25ns. It includes features such as temperature-compensated refresh, partial-array refresh, and deep power-down mode, making it suitable for applications requiring low power and efficient memory management. However, it is noted that this part is not recommended for new designs.

Datasheet Summary
Powered by GS/AI

The MT45W4MW16PFA-85 WT is a 64Mb asynchronous/page mode memory device from Quarktwin Technology Ltd., featuring a 4 Meg x 16 configuration. It operates with a voltage range of 1.70V to 1.95V for VCC and 1.70V to 3.30V for VCCQ. The device offers random access times of 85ns and supports low power consumption modes, with an asynchronous read current of less than 25mA and a standby current of 120µA, which can be reduced to 100µA in low-power mode. The memory supports a page mode read access with a page size of sixteen words, allowing for intrapage read access times of 25ns. It includes features such as temperature-compensated refresh, partial-array refresh, and deep power-down mode, making it suitable for applications requiring low power and efficient memory management. However, it is noted that this part is not recommended for new designs.

Suppliers

Company
Product
Description
Supplier Links
IC PSRAM 64MBIT PARALLEL 48VFBGA

IC PSRAM 64MBIT PARALLEL 48VFBGA

Supplier's Site Datasheet
Memory - MT45W4MW16PFA-85 WT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
PSRAM (Pseudo SRAM) Memory IC 64Mbit Parallel 85 ns 48-VFBGA (6x8)

PSRAM (Pseudo SRAM) Memory IC 64Mbit Parallel 85 ns 48-VFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Micron Technology, Inc. Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT45W4MW16PFA-85 WT MT45W4MW16PFA-85 WT MT45W4MW16PFA-85 WT
Product Name Memory Memory
Memory Category PSRAM Chip PSRAM; SRAM Chip PSRAM; SRAM Chip
Cycle Time 85 ns
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
Density 512000 kbits 64000 kbits 64000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
3 suppliers
Flash Memory - 1882745P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 32000 kbits
Package Type USON
View Details
5V Memory IC and Storage Component - 774-MT5C1008ECA55L883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory - 448-CY14B101KA-SP25XITTR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits
View Details
4 suppliers