Micron Technology, Inc. Memory MT45W4MW16BFB-706 WT

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Description
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Product
Description
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Memory - MT45W4MW16BFB-706WT-ND - DigiKey
Thief River Falls, MN, United States
PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 70ns 54-VFBGA (6x9)

PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 70ns 54-VFBGA (6x9)

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Integrated Circuits (ICs) - Memory - Memory - MT45W4MW16BFB-706 WT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT45W4MW16BFB-706 WT
Integrated Circuits (ICs) - Memory - Memory MT45W4MW16BFB-706 WT
IC PSRAM 64MBIT PARALLEL 54VFBGA

IC PSRAM 64MBIT PARALLEL 54VFBGA

Supplier's Site
Memory - MT45W4MW16BFB-706 WT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
PSRAM (Pseudo SRAM) Memory IC 64Mbit Parallel 70 ns 54-VFBGA (6x9)

PSRAM (Pseudo SRAM) Memory IC 64Mbit Parallel 70 ns 54-VFBGA (6x9)

Buy Now Datasheet
IC PSRAM 64MBIT PARALLEL 54VFBGA

IC PSRAM 64MBIT PARALLEL 54VFBGA

Supplier's Site Datasheet

Technical Specifications

  Micron Technology, Inc. DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT45W4MW16BFB-706 WT MT45W4MW16BFB-706WT-ND MT45W4MW16BFB-706 WT MT45W4MW16BFB-706 WT MT45W4MW16BFB-706 WT
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category PSRAM Chip PSRAM Volatile; SRAM Chip PSRAM; SRAM Chip PSRAM; SRAM Chip
Cycle Time 70 ns 70 ns
Operating Temperature -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F) -30 to 85 C (-22 to 185 F)
Density 512000 kbits 64000 kbits 64000 kbits 64000 kbits 64000 kbits
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