Micron Technology, Inc. Memory MT45W2MW16BGB-708 AT

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Description
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Memory - MT45W2MW16BGB-708AT-ND - DigiKey
Thief River Falls, MN, United States
PSRAM (Pseudo SRAM) Memory IC 32Mb (2M x 16) Parallel 70ns 54-VFBGA (6x8)

PSRAM (Pseudo SRAM) Memory IC 32Mb (2M x 16) Parallel 70ns 54-VFBGA (6x8)

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IC PSRAM 32MBIT PARALLEL 54VFBGA

IC PSRAM 32MBIT PARALLEL 54VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT45W2MW16BGB-708 AT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT45W2MW16BGB-708 AT
Integrated Circuits (ICs) - Memory - Memory MT45W2MW16BGB-708 AT
IC PSRAM 32MBIT PARALLEL 54VFBGA

IC PSRAM 32MBIT PARALLEL 54VFBGA

Supplier's Site
Memory - MT45W2MW16BGB-708 AT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
PSRAM (Pseudo SRAM) Memory IC 32Mbit Parallel 70 ns 54-VFBGA (6x8)

PSRAM (Pseudo SRAM) Memory IC 32Mbit Parallel 70 ns 54-VFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Micron Technology, Inc. DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT45W2MW16BGB-708 AT MT45W2MW16BGB-708AT-ND MT45W2MW16BGB-708 AT MT45W2MW16BGB-708 AT MT45W2MW16BGB-708 AT
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category PSRAM Chip PSRAM PSRAM; SRAM Chip Volatile; SRAM Chip PSRAM; SRAM Chip
Cycle Time 70 ns 70 ns
Operating Temperature -30 to 85 C (-22 to 185 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 256000 kbits 32000 kbits 32000 kbits 32000 kbits 32000 kbits
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