Micron Technology, Inc. Memory MT45W1MW16BAFB-708 WT

The MT45W1MW16BAFB-708 WT is a 16Mbit Pseudo SRAM (PSRAM) memory device from Quarktwin Technology Ltd. It supports asynchronous, page, and burst operations with a random access time of 70ns or 85ns. The device operates with VCC voltage ranging from 1.70V to 1.95V and VCCQ voltage from 1.70V to 3.30V. It features a page mode read access with a sixteen-word page size, interpage read access time of 70ns, and intrapage read access time of 20ns. The memory supports burst mode read and write access, with a maximum clock rate of 80 MHz and a burst initial latency of 50ns at this frequency. Power consumption is low, with asynchronous read currents under 20mA and standby current of 110µA for standard configurations. The device also includes low-power features such as temperature compensated refresh, an on-chip temperature sensor, partial array refresh, and deep power-down mode, making it suitable for applications requiring efficient power management. The operating temperature range for the wireless version is -30°C to +85°C, which exceeds typical specifications for cellular applications. The memory is packaged in a 54-ball VFBGA format, facilitating integration into compact designs.