The MT44K32M18RB-093:A is a 576Mbit RLDRAM 3 memory device from Quarktwin Technology Ltd. It features a 1066 MHz DDR operation with a data rate of 2133 Mb/s per ball and offers a peak bandwidth of 76.8 Gb/s when configured as x36 at 1066 MHz. The memory is organized as 32 Meg x 18 with 16 banks and operates at a voltage of 1.35V for V_{DD} and 1.2V for V_{DDQ}. It supports programmable read/write latency and burst length, along with a data mask for write commands. The device includes integrated on-die termination and features a 168-ball FBGA package. The refresh rate is 64ms with 128K refresh cycles per 64ms. This product is suitable for applications requiring high-speed memory with reduced cycle times and advanced features such as differential input clocks and JTAG interface support.
DRAM Memory IC 576Mb (32M x 18) Parallel 1.066GHz 10ns 168-BGA (13.5x13.5)
DRAM Memory IC 576Mbit Parallel 1.066 GHz 10 ns 168-BGA (13.5x13.5)
IC DRAM 576MBIT PARALLEL 168BGA
IC DRAM 576MBIT PAR 168BGA
| DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-1553-ND | MT44K32M18RB-093:A | MT44K32M18RB-093:A | MT44K32M18RB-093:A |
| Product Name | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Density | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits |
| Package Type | 168-TBGA | BGA; 168-TBGA |
