IC DRAM 576MBIT PARALLEL 168BGA
IC DRAM 576MBIT PAR 168BGA Product overview: MT44K16M36RB-107E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT44K16M36RB-107
Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: DRAM Memory IC 576Mb (16M x 36) Parallel 933 MHz 8 ns 168-BGA (13.5x13.5)
Package: 168-TBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT44K16M36
Categories: Integrated Circuits (ICs)
Case / Package: 168-BGA (13.5x13.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Quantity per package: 1190
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0032
DRAM Memory IC 576Mb (16M x 36) Parallel 933MHz 8ns 168-BGA (13.5x13.5)
IC DRAM 576MBIT PAR 168BGA
DRAM, 16M X 36BIT, 0 TO 95DEG C; DRAM Type:DDR; DRAM Density:576Mbit; DRAM Memory Configuration:16M x 36bit; Clock Frequency:1.066GHz; Memory Case Style:BGA; No. of Pins:168Pins; Supply Voltage Nom:1.35V; Access Time:1.07ns RoHS Compliant: Yes
IC DRAM 576MBIT PARALLEL 168BGA
DRAM Memory IC 576Mbit Parallel 933 MHz 8 ns 168-BGA (13.5x13.5)
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT44K16M36RB-107E:B | 774-MT44K16M36RB-107E:B | MT44K16M36RB-107E:B-ND | MT44K16M36RB-107E:B | 80AH8070 | MT44K16M36RB-107E:B | MT44K16M36RB-107E:B | |
| Product Name | Memory | Memory IC and Storage Component | Memory - SDRAM - MT44K16M36RB-107E:B | Memory | Integrated Circuits (ICs) - Memory - Memory | Dram, 16M X 36Bit, 0 To 95Deg C; Dram Type Micron | Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 933 MHz | 933 MHz | 1066 MHz | |||||
| Access Time | 8 ns | 8 ns | 1.07 ns | 8 ns | 8 ns | |||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | |||
| Density | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits |
