The MT42L32M16D1AB-3 WT:A TR is a 512Mb Mobile LPDDR2 SDRAM memory device from Quarktwin Technology Ltd. It operates with ultra-low voltage power supplies, specifically V_DD2 and V_DDCA/V_DDQ ranging from 1.14V to 1.30V, and V_DD1 from 1.70V to 1.95V. The device supports a clock frequency range of 400,Äì10 MHz, translating to a data rate range of 800,Äì20 Mb/s per pin. This memory features a four-bit prefetch DDR architecture and includes four internal banks for concurrent operations. It supports multiplexed, double data rate command and address inputs, with commands entered on every clock edge. The device also offers programmable read and write latencies, burst lengths of 4, 8, or 16, and includes an on-chip temperature sensor for self-refresh rate control. Additional features include partial-array self-refresh, deep power-down mode, selectable output drive strength, and clock stop capability. The memory is packaged in a 121-ball FBGA format measuring 6.5mm x 8mm and is RoHS-compliant. The operating temperature range is from -25¬8C to +85¬8C, making it suitable for various applications in mobile devices.
IC DRAM 512MBIT PARALLEL 121FBGA
SDRAM - Mobile LPDDR2 Memory IC 512Mbit Parallel 333 MHz 121-FBGA (6.5x8)
IC DRAM 512MBIT PARALLEL 121FBGA
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT42L32M16D1AB-3 WT:A TR | MT42L32M16D1AB-3 WT:A TR | MT42L32M16D1AB-3 WT:A TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
| Operating Temperature | -30 to 85 C (-22 to 185 F) |
