IC DRAM 512MBIT PAR 134VFBGA
SDRAM - Mobile LPDDR2 Memory IC 512Mbit Parallel 533 MHz 134-VFBGA (10x11.5)
IC DRAM 512MBIT PAR 134VFBGA
DRAM, 16M X 32BIT, -40 TO 85DEG C; DRAM Type:LPDDR2; DRAM Density:512Mbit; DRAM Memory Configuration:16M x 32bit; Clock Frequency:533MHz; Memory Case Style:VFBGA; No. of Pins:134Pins; Supply Voltage Nom:1.2V; Access Time:- RoHS Compliant: Yes
| Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT42L16M32D1HE-18 IT:E | MT42L16M32D1HE-18 IT:E | MT42L16M32D1HE-18 IT:E | 80AH8058 |
| Product Name | Integrated Circuits (ICs) - Memory | Memory | Memory | Dram, 16M X 32Bit, -40 To 85Deg C; Dram Type Micron |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Data Rate | 533 MHz | 533 MHz | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
