Micron Technology, Inc. Memory MT42L128M32D1U80MWC2

Description
IC DRAM 4GBIT PARALLEL
Datasheet
Description
IC DRAM 4GBIT PARALLEL
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 4GBIT PARALLEL

IC DRAM 4GBIT PARALLEL

Supplier's Site Datasheet
Memory - MT42L128M32D1U80MWC2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel

SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT42L128M32D1U80MWC2
Integrated Circuits (ICs) - Memory - Memory MT42L128M32D1U80MWC2
IC DRAM 4GBIT PARALLEL

IC DRAM 4GBIT PARALLEL

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT42L128M32D1U80MWC2 MT42L128M32D1U80MWC2 MT42L128M32D1U80MWC2
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - RAM - MT5C1008DCJ-45/IT - 1221437-MT5C1008DCJ-45/IT - Win Source Electronics
Specs
Operating Temperature -40 C (-40 F)
Density 1000 kbits
Pins 32
View Details
2 suppliers
Specs
Operating Temperature 0 to 115 C (32 to 239 F)
Package Type QFP; Tray
Supply Voltage 3.135V ~ 3.465V
View Details
Flash Memory - 1882794 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 71016S20PHG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details