The MT41K64M16TW-107 AAT:J TR is a 1Gb DDR3L SDRAM memory device designed for automotive applications. It features a configuration of 8 Meg x 16 with 8 internal banks and operates at a voltage of 1.35V, making it a low-voltage alternative to standard DDR3 memory. The device supports a data rate of 1866 MT/s with a cycle time of 1.07 ns at a CAS latency of 13. This memory IC is AEC-Q100 certified, ensuring it meets automotive reliability standards, and is suitable for operation in temperatures ranging from -40¬8C to +105¬8C. The package type is a 96-ball FBGA, measuring 8mm x 14mm, and it includes features such as write leveling, output driver calibration, and programmable latency settings. Engineers considering this product should note its backward compatibility with 1.5V DDR3 systems, making it versatile for various applications. The device also supports self-refresh modes and has a refresh count of 8K, which is essential for maintaining data integrity in automotive environments.
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-FBGA (8x14)
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-FBGA (8x14)
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-FBGA (8x14)
IC DRAM 1GBIT PAR 96FBGA Product overview: MT41K64M16TW-107 AAT:J TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K64M16TW-107
Category: Integrated Circuits (ICs)>Memory
Series: Automotive, AEC-Q100
Package: Tape & Reel
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: SDRAM - DDR3L
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)
Temperature Range - Operating: -40°C ~ 105°C (TC)
Memory Format: DRAM
Clock Frequency: 933 MHz
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS43TR16640A-15GBL; IS46TR16640A-15GBLA2
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0032
Mfr: Micron Technology Inc.
Base Product Number: MT41K64M16
SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14)
IC DRAM 1GBIT PAR 96FBGA
IC DRAM 1GBIT PARALLEL 96FBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 557-1742-6-ND | 774-MT41K64M16TW-107 AAT:J TR | MT41K64M16TW-107 AAT:J TR | MT41K64M16TW-107 AAT:J TR | MT41K64M16TW-107 AAT:J TR | |
| Product Name | Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Package Type | 96-TFBGA | BGA; Tape & Reel (TR) | BGA; 96-TFBGA | |||
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | Surface Mount | |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
