Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR3L
Memory Type: Volatile
Memory Size: 4Gb (512M x 8)
Access Time: 20ns
Categories: Integrated Circuits
Supplier Device Package: 78-FBGA (9x10.5)
Status: Obsolete
Temperature Range - Operating: 0°C ~ 95°C
Memory Format: DRAM
Clock Frequency: 933MHz
Memory Interface: Parallel
Manufacturer Package: 78-TFBGA
Popularity: Low
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Family Part Number: MT41K512M8
Manufacturer Pack Quantity: 1,000
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.283V ~ 1.45V
IC DRAM 4GBIT PAR 78FBGA Product overview: MT41K512M8RH-107:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K512M8RH-107
SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel 933MHz 20ns 78-FBGA (9x10.5)
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)
IC DRAM 4GBIT PAR 78FBGA
IC DRAM 4GBIT PARALLEL 78FBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41K512M8RH-107:E | MT41K512M8RH-107:E-ND | MT41K512M8RH-107:E | MT41K512M8RH-107:E | MT41K512M8RH-107:E | |
| Product Name | Memory - SDRAM - MT41K512M8RH-107:E | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | ||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 0degC ~ 95degC (TC) |
