Micron Technology, Inc. Memory MT41K512M8DA-93:P

Description
SDRAM - DDR3L Memory IC 4Gbit Parallel 1.066 GHz 20 ns 78-FBGA (8x10.5)
Datasheet
Description
SDRAM - DDR3L Memory IC 4Gbit Parallel 1.066 GHz 20 ns 78-FBGA (8x10.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT41K512M8DA-93:P - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 4Gbit Parallel 1.066 GHz 20 ns 78-FBGA (8x10.5)

SDRAM - DDR3L Memory IC 4Gbit Parallel 1.066 GHz 20 ns 78-FBGA (8x10.5)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT41K512M8DA-93:P - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT41K512M8DA-93:P
Integrated Circuits (ICs) - Memory - Memory MT41K512M8DA-93:P
IC DRAM 4GBIT PAR 78FBGA

IC DRAM 4GBIT PAR 78FBGA

Supplier's Site
IC SDRAM 4GBIT 1067MHZ 78BGA

IC SDRAM 4GBIT 1067MHZ 78BGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT41K512M8DA-93:P MT41K512M8DA-93:P MT41K512M8DA-93:P
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 591289-002-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details