Manufacturer: Micron Technology Inc.
Packaging: Tray
Operating Temperature Range: -40°C ~ 95°C (TC)
Package: 78-TFBGA
Mounting: SMD
Technology: SDRAM - DDR3L
Operating Supply Voltage: 1.283 V ~ 1.45 V
Memory Type: Volatile
Memory Size: 4Gb (512M x 8)
Access Time: 20ns
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Manufacturer Homepage: www.micron.com
Clock Frequency: 933MHz
Memory Interface: Parallel
Manufacturer Package: 78-FBGA (8x10.5)
Alternative Parts (Cross-Reference): MT41K512M8DA-107IT:P
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
IC DRAM 4GBIT PAR 78FBGA Product overview: MT41K512M8DA-107 IT:P from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K512M8DA-107
SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel 933MHz 20ns 78-FBGA (8x10.5)
DRAM, DDR3L, 4GBIT, -40 TO 95DEG C ROHS COMPLIANT: YES
DRAM, 512M X 8BIT, -40 TO 95DEG C; DRAM Type:DDR3; DRAM Density:4Gbit; DRAM Memory Configuration:512M x 8bit; Clock Frequency:933MHz; Memory Case Style:TFBGA; No. of Pins:78Pins; Supply Voltage Nom:1.35V; Access Time:1.07ns RoHS Compliant: Yes
IC DRAM 4GBIT PARALLEL 78FBGA
IC DRAM 4GBIT PARALLEL 78FBGA
DRAM, 512M X 8BIT, -40 TO 95DEG C; DRAM TYPE:DDR3; DRAM DENSITY:4GBIT; DRAM MEMORY CONFIGURATION:512M X 8BIT; CLOCK FREQUENCY:933MHZ; MEMORY CASE STYLE:TFBGA; NO. OF PINS:78PINS; SUPPLY VOLTAGE NOM:1.35V; ACCESS TIME:1.07NS ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IC DRAM 4GBIT PAR 78FBGA
FBGA-78 DDR SDRAM ROHS
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (8x10.5)
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Lingto Electronic Limited | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41K512M8DA-107 IT:P | MT41K512M8DA-107IT:P-ND | 91AH7955 | 80AH8047 | MT41K512M8DA-107 IT:P | MT41K512M8DA-107 IT:P | 136311931 | MT41K512M8DA-107 IT:P | MT41K512M8DA-107 IT:P | MT41K512M8DA-107 IT:P | |
| Product Name | Memory - SDRAM - MT41K512M8DA-107 IT:P | Memory IC and Storage Component | Memory | Dram, Ddr3L, 4Gbit, -40 To 95Deg C Rohs Compliant Micron | Dram, 512M X 8Bit, -40 To 95Deg C; Dram Type Micron | Memory | Memory | Memory Board | Integrated Circuits (ICs) - Memory - Memory | Memory >> DDR SDRAM | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR3L; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 1.07 ns | 20 ns | 20 ns | 20 ns | |||||
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | ||||||
| Supply Voltage | 1.283 V ~ 1.45 V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | Surface Mount | 1.283V ~ 1.45V | |||||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits |
