Micron Technology, Inc. Memory MT41K512M4HX-187E:D

Description
SDRAM - DDR3L Memory IC 2Gbit Parallel 533 MHz 13.125 ns 78-FBGA (9x11.5)
Datasheet
Description
SDRAM - DDR3L Memory IC 2Gbit Parallel 533 MHz 13.125 ns 78-FBGA (9x11.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT41K512M4HX-187E:D - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 2Gbit Parallel 533 MHz 13.125 ns 78-FBGA (9x11.5)

SDRAM - DDR3L Memory IC 2Gbit Parallel 533 MHz 13.125 ns 78-FBGA (9x11.5)

Buy Now Datasheet
IC DRAM 2GBIT PARALLEL 78FBGA

IC DRAM 2GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41K512M4HX-187E:D
Integrated Circuits (ICs) - Memory - Memory MT41K512M4HX-187E:D
IC DRAM 2GBIT PAR 78FBGA

IC DRAM 2GBIT PAR 78FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT41K512M4HX-187E:D MT41K512M4HX-187E:D MT41K512M4HX-187E:D
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 13.12 ns 13.12 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
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