Micron Technology, Inc. Memory - SDRAM - MT41K512M16TNA-125 IT:E TR MT41K512M16TNA-125 IT:E TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel package Operating Temperature Range: -40°C ~ 95°C (TC) Package: 96-TFBGA Mounting: SMD Technology: SDRAM - DDR3L Operating Supply Voltage: 1.283 V ~ 1.45 V Memory Type: Volatile Memory Size: 8Gb (512M x 16) Access Time: 13.5ns Part Status: Obsolete(EOL) Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 800MHz Memory Interface: Parallel Manufacturer Package: 96-FBGA (10x14) Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Reel package Operating Temperature Range: -40°C ~ 95°C (TC) Package: 96-TFBGA Mounting: SMD Technology: SDRAM - DDR3L Operating Supply Voltage: 1.283 V ~ 1.45 V Memory Type: Volatile Memory Size: 8Gb (512M x 16) Access Time: 13.5ns Part Status: Obsolete(EOL) Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 800MHz Memory Interface: Parallel Manufacturer Package: 96-FBGA (10x14) Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT41K512M16TNA-125 IT:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT41K512M16TNA-125 IT:E TR
Memory - SDRAM - MT41K512M16TNA-125 IT:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel package Operating Temperature Range: -40°C ~ 95°C (TC) Package: 96-TFBGA Mounting: SMD Technology: SDRAM - DDR3L Operating Supply Voltage: 1.283 V ~ 1.45 V Memory Type: Volatile Memory Size: 8Gb (512M x 16) Access Time: 13.5ns Part Status: Obsolete(EOL) Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 800MHz Memory Interface: Parallel Manufacturer Package: 96-FBGA (10x14) Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Reel package
Operating Temperature Range: -40°C ~ 95°C (TC)
Package: 96-TFBGA
Mounting: SMD
Technology: SDRAM - DDR3L
Operating Supply Voltage: 1.283 V ~ 1.45 V
Memory Type: Volatile
Memory Size: 8Gb (512M x 16)
Access Time: 13.5ns
Part Status: Obsolete(EOL)
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 800MHz
Memory Interface: Parallel
Manufacturer Package: 96-FBGA (10x14)
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC and Storage Component - 774-MT41K512M16TNA-125 IT:E TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT41K512M16TNA-125 IT:E TR
Memory IC and Storage Component 774-MT41K512M16TNA-125 IT:E TR
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT41K512M16TNA-125 IT:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K512M16TNA-1 25 IT:E TR can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT41K512M16TNA-125 IT:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K512M16TNA-125 IT:E TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - MT41K512M16TNA-125IT:ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3L Memory IC 8Gb (512M x 16) Parallel 800MHz 13.5ns 96-FBGA (10x14)

SDRAM - DDR3L Memory IC 8Gb (512M x 16) Parallel 800MHz 13.5ns 96-FBGA (10x14)

Buy Now Datasheet
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT41K512M16TNA-125 IT:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41K512M16TNA-125 IT:E TR
Integrated Circuits (ICs) - Memory - Memory MT41K512M16TNA-125 IT:E TR
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA (10x14)

SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA (10x14)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT41K512M16TNA-125 IT:E TR MT41K512M16TNA-125IT:ETR-ND MT41K512M16TNA-125 IT:E TR MT41K512M16TNA-125 IT:E TR MT41K512M16TNA-125 IT:E TR
Product Name Memory - SDRAM - MT41K512M16TNA-125 IT:E TR Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 13.5 ns 13.5 ns 13.5 ns 13.5 ns
Operating Temperature -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F) -40 to 95 C (-40 to 203 F)
Supply Voltage 1.283 V ~ 1.45 V 1.283V ~ 1.45V 1.283V ~ 1.45V -40degC ~ 95degC (TC) 1.283V ~ 1.45V
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