Micron Technology, Inc. Memory MT41K2G4TRF-107:E

Description
IC DRAM 8GBIT PARALLEL 78FBGA
Description
IC DRAM 8GBIT PARALLEL 78FBGA
Datasheet
Datasheet Summary
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The MT41K2G4TRF-107:E is an 8Gb TwinDie DDR3L SDRAM memory module from Quarktwin Technology Ltd., featuring a configuration of 128 Meg x 4 with 8 banks across 2 ranks. It operates at a voltage of 1.35V, with a data rate of 1866 MT/s and a CAS latency of 13. The memory is packaged in a 78-ball FBGA format, measuring 9.5mm x 11.5mm x 1.2mm, and is designed for commercial temperature ranges from 0¬8C to 95¬8C. This memory module supports backward compatibility with 1.5V systems and includes features such as dual chip select, on-die termination, and a standard self-refresh mode. It is suitable for applications requiring efficient power consumption and high-speed data processing. The module is also available in an industrial temperature version, making it versatile for various environments.

Datasheet Summary
Powered by GS/AI

The MT41K2G4TRF-107:E is an 8Gb TwinDie DDR3L SDRAM memory module from Quarktwin Technology Ltd., featuring a configuration of 128 Meg x 4 with 8 banks across 2 ranks. It operates at a voltage of 1.35V, with a data rate of 1866 MT/s and a CAS latency of 13. The memory is packaged in a 78-ball FBGA format, measuring 9.5mm x 11.5mm x 1.2mm, and is designed for commercial temperature ranges from 0¬8C to 95¬8C. This memory module supports backward compatibility with 1.5V systems and includes features such as dual chip select, on-die termination, and a standard self-refresh mode. It is suitable for applications requiring efficient power consumption and high-speed data processing. The module is also available in an industrial temperature version, making it versatile for various environments.

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - MT41K2G4TRF-107:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 78-FBGA (9.5x11.5)

SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 78-FBGA (9.5x11.5)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41K2G4TRF-107:E
Integrated Circuits (ICs) - Memory - Memory MT41K2G4TRF-107:E
IC DRAM 8GBIT PAR 78FBGA

IC DRAM 8GBIT PAR 78FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT41K2G4TRF-107:E MT41K2G4TRF-107:E MT41K2G4TRF-107:E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns
Density 8000000 kbits 8000000 kbits 8000000 kbits
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