Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT41K2G4TRF-107:E

Description
IC DRAM 8GBIT PAR 78FBGA
Description
IC DRAM 8GBIT PAR 78FBGA
Datasheet
Datasheet Summary
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The MT41K2G4TRF-107:E is an 8Gb TwinDie DDR3L SDRAM memory module from Quarktwin Technology Ltd., featuring a configuration of 128 Meg x 4 with 8 banks across 2 ranks. It operates at a voltage of 1.35V, with a data rate of 1866 MT/s and a CAS latency of 13. The memory is packaged in a 78-ball FBGA format, measuring 9.5mm x 11.5mm x 1.2mm, and is designed for commercial temperature ranges from 0°C to 95°C. This memory module supports backward compatibility with 1.5V systems and includes features such as dual chip select, on-die termination, and a standard self-refresh mode. It is suitable for applications requiring efficient power consumption and high-speed data processing. The module is also available in an industrial temperature version, making it versatile for various environments.

Datasheet Summary
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The MT41K2G4TRF-107:E is an 8Gb TwinDie DDR3L SDRAM memory module from Quarktwin Technology Ltd., featuring a configuration of 128 Meg x 4 with 8 banks across 2 ranks. It operates at a voltage of 1.35V, with a data rate of 1866 MT/s and a CAS latency of 13. The memory is packaged in a 78-ball FBGA format, measuring 9.5mm x 11.5mm x 1.2mm, and is designed for commercial temperature ranges from 0°C to 95°C. This memory module supports backward compatibility with 1.5V systems and includes features such as dual chip select, on-die termination, and a standard self-refresh mode. It is suitable for applications requiring efficient power consumption and high-speed data processing. The module is also available in an industrial temperature version, making it versatile for various environments.

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41K2G4TRF-107:E
Integrated Circuits (ICs) - Memory - Memory MT41K2G4TRF-107:E
IC DRAM 8GBIT PAR 78FBGA

IC DRAM 8GBIT PAR 78FBGA

Supplier's Site
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - MT41K2G4TRF-107:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 78-FBGA (9.5x11.5)

SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 78-FBGA (9.5x11.5)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT41K2G4TRF-107:E MT41K2G4TRF-107:E MT41K2G4TRF-107:E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Density 8000000 kbits 8000000 kbits 8000000 kbits
Supply Voltage 78-TFBGA 1.283V ~ 1.45V
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