IC DRAM 4GBIT PAR 96FBGA Product overview: MT41K256M16TW-107 V:P TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K256M16TW-10
IC DRAM 4GBIT PAR 96FBGA
IC DRAM 4GBIT PARALLEL 96FBGA
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 96-FBGA (9x14)
IC DRAM 4G PARALLEL 933MHZ
| ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41K256M16TW-107 V:P TR | MT41K256M16TW-107 V:P TR | MT41K256M16TW-107 V:P TR | MT41K256M16TW-107 V:P TR | 533-MT41K256M16TW-107 V:P TR |
| Product Name | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | IC DRAM 4G PARALLEL 933MHZ |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) |
