IC DRAM 4GBIT PAR 96FBGA Product overview: MT41K256M16TW-107:P TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K256M16TW-10
IC DRAM 4GBIT PAR 96FBGA
IC DRAM 4GBIT PAR 96FBGA
SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 933MHz 20ns 96-FBGA (8x14)
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel (TR)
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: SDRAM - DDR3L
Memory Type: Volatile
Memory Size: 4Gb (256M x 16)
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)
Temperature Range - Operating: 0°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 933 MHz
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 3 (168 Hours)
HTSUS: 8542.32.0036
Mfr: Micron Technology Inc.
Base Product Number: MT41K256M16
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 96-FBGA (8x14)
IC DRAM 4GBIT PARALLEL 96FBGA
IC DRAM 4GBIT PAR 96FBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41K256M16TW-107:P TR | 557-MT41K256M16TW-107:PTRDKR-ND | MT41K256M16TW-107:P TR | MT41K256M16TW-107:P TR | MT41K256M16TW-107:P TR | |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | ||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Address Bus Width | 16 bits | |||||
| Package Type | BGA; Tape & Reel (TR) | 96-TFBGA | BGA; 96-TFBGA |
