IC DRAM 4GBIT PAR 96FBGA Product overview: MT41K256M16TW-093:P from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K256M16TW-09
Manufacturer: Micron Technology Inc.
Packaging: Tray
Operating Temperature Range: 0°C ~ 95°C (TC)
Package: 96-TFBGA
Mounting: SMD
Technology: SDRAM - DDR3L
Operating Supply Voltage: 1.283 V ~ 1.45 V
Memory Type: Volatile
Memory Size: 4Gb (256M x 16)
Access Time: 20ns
Family Name: MT41K256M16
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 1067MHz
Memory Interface: Parallel
Manufacturer Package: 96-FBGA (8x14)
Alternative Parts (Cross-Reference): H5TQ4G63AFR-G7I; H5TQ4G63MFR-G7C; H5TQ4G63MFR-G7I;
Introduction Date: May 12, 2017
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
IC DRAM 4GBIT PARALLEL 96FBGA
SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 1.066GHz 20ns 96-FBGA (8x14)
DRAM, 256M X 16BIT, 0 TO 95DEG C ROHS COMPLIANT: YES
DRAM, 256M X 16BIT, 0 TO 95DEG C; DRAM Type:DDR3; DRAM Density:4Gbit; DRAM Memory Configuration:256M x 16bit; Clock Frequency:1.066GHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.35V; Access Time:938ps RoHS Compliant: Yes
IC DRAM 4GBIT PARALLEL 96FBGA
IC DRAM 4GBIT PAR 96FBGA
SDRAM - DDR3L Memory IC 4Gbit Parallel 1.066 GHz 20 ns 96-FBGA (8x14)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41K256M16TW-093:P | MT41K256M16TW-093:P | MT41K256M16TW-093:P-ND | 32AJ7535 | 83AH2726 | MT41K256M16TW-093:P | MT41K256M16TW-093:P | MT41K256M16TW-093:P | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT41K256M16TW-093:P | Memory | Memory | Dram, 256M X 16Bit, 0 To 95Deg C Rohs Compliant Micron | Dram, 256M X 16Bit, 0 To 95Deg C; Dram Type Micron | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR3L; DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 0.9380 ns | 20 ns | 20 ns | |||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | |||
| Number of Words | 32000 k |
