IC DRAM 4GBIT PAR 78FBGA Product overview: MT41K1G4RH-107:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41K1G4RH-107:E
Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: SDRAM - DDR3L Memory IC 4Gb (1G x 4) Parallel 933 MHz 20 ns 78-FBGA (9x10.5)
Package: Tray
Package: 78-TFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT41K1G4
Categories: Integrated Circuits (ICs)
Case / Package: 78-FBGA (9x10.5)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 3 (168 Hours)
HTSUS: 8542.32.0036
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)
IC DRAM 4GBIT PAR 78FBGA
IC DRAM 4GBIT PARALLEL 78FBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41K1G4RH-107:E | MT41K1G4RH-107:E | MT41K1G4RH-107:E | MT41K1G4RH-107:E | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT41K1G4RH-107:E | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | ||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) |
