Micron Technology, Inc. Memory - SDRAM - MT41J512M8RH-107:E MT41J512M8RH-107:E

Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR3 Memory Type: Volatile Memory Size: 4Gb (512M x 8) Access Time: 20ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 95°C (TC) Case / Package: 78-FBGA (9x10.5) Supply Voltage - Operating: 1.425 V to 1.575 V Memory Format: DRAM Max Frequency: 933MHz Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR3 Memory Type: Volatile Memory Size: 4Gb (512M x 8) Access Time: 20ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 95°C (TC) Case / Package: 78-FBGA (9x10.5) Supply Voltage - Operating: 1.425 V to 1.575 V Memory Format: DRAM Max Frequency: 933MHz Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT41J512M8RH-107:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT41J512M8RH-107:E
Memory - SDRAM - MT41J512M8RH-107:E
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM - DDR3 Memory Type: Volatile Memory Size: 4Gb (512M x 8) Access Time: 20ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 95°C (TC) Case / Package: 78-FBGA (9x10.5) Supply Voltage - Operating: 1.425 V to 1.575 V Memory Format: DRAM Max Frequency: 933MHz Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR3
Memory Type: Volatile
Memory Size: 4Gb (512M x 8)
Access Time: 20ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 95°C (TC)
Case / Package: 78-FBGA (9x10.5)
Supply Voltage - Operating: 1.425 V to 1.575 V
Memory Format: DRAM
Max Frequency: 933MHz
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - MT41J512M8RH-107:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)

SDRAM - DDR3 Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)

Buy Now
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41J512M8RH-107:E
Integrated Circuits (ICs) - Memory - Memory MT41J512M8RH-107:E
IC DRAM 4GBIT PAR 78FBGA

IC DRAM 4GBIT PAR 78FBGA

Supplier's Site

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT41J512M8RH-107:E MT41J512M8RH-107:E MT41J512M8RH-107:E
Product Name Memory - SDRAM - MT41J512M8RH-107:E Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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