The MT41J256M8HX-187E:D is a DDR3 SDRAM memory chip from Quarktwin Technology Ltd. It features a configuration of 256 Meg x 8 with a total capacity of 2Gb. The device operates at a voltage of 1.5V ±0.075V and supports a data rate of 1066 MT/s with a CAS latency (CL) of 7. It is packaged in a 78-ball FBGA format measuring 9mm x 11.5mm. This memory chip includes an 8n-bit prefetch architecture and has 8 internal banks, allowing for efficient data handling. It supports programmable CAS READ and WRITE latencies, as well as fixed burst lengths of 8 and burst chop of 4. The device is designed for commercial temperature ranges from 0°C to 95°C and features self-refresh capabilities, making it suitable for various applications requiring reliable memory performance. Engineers considering this product should note its backward compatibility with lower data rates, making it versatile for different system requirements.
IC DRAM 2GBIT PAR 78FBGA Product overview: MT41J256M8HX-187E:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41J256M8HX-187
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR3
Memory Type: Volatile
Memory Size: 2Gb (256M x 8)
Access Time: 13.125ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 95°C (TC)
Case / Package: 78-FBGA (9x11.5)
Supply Voltage - Operating: 1.425 V to 1.575 V
Memory Format: DRAM
Max Frequency: 533MHz
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
IC DRAM 2GBIT PARALLEL 78FBGA
IC DRAM 2GBIT PAR 78FBGA
SDRAM - DDR3 Memory IC 2Gbit Parallel 533 MHz 13.125 ns 78-FBGA (9x11.5)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41J256M8HX-187E:D | MT41J256M8HX-187E:D | MT41J256M8HX-187E:D | MT41J256M8HX-187E:D | |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - MT41J256M8HX-187E:D | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 13.12 ns | 13.12 ns | 13.12 ns | 13.12 ns | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Package Type | BGA; Tray | BGA; 78-FBGA (9x11.5) | BGA; 78-TFBGA |
