Micron Technology, Inc. Memory MT41J256M16HA-107:E

Description
IC DRAM 4GBIT PARALLEL 96FBGA
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Description
IC DRAM 4GBIT PARALLEL 96FBGA
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Datasheet
Datasheet Summary
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The MT41J256M16HA-107:E is a 4Gb DDR3 SDRAM memory chip from Quarktwin Technology Ltd., featuring a configuration of 256 Meg x 16 and housed in a 96-ball FBGA package measuring 8mm x 14mm. It operates at a voltage of 1.5V ¬±0.075V and supports a data rate of 2133 MT/s with a cycle time of 938ps at a CAS latency of 14. This memory device includes eight internal banks and offers programmable CAS READ and WRITE latencies, as well as a fixed burst length of 8 and burst chop of 4. The reduced tFAW specification allows for a tFAW of 30ns, which is lower than the standard 35ns for DDR3-2133. The operating temperature range is commercial, from 0¬8C to +95¬8C, making it suitable for a variety of applications. The device also features self-refresh capabilities and on-die termination for improved signal integrity.

Datasheet Summary
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The MT41J256M16HA-107:E is a 4Gb DDR3 SDRAM memory chip from Quarktwin Technology Ltd., featuring a configuration of 256 Meg x 16 and housed in a 96-ball FBGA package measuring 8mm x 14mm. It operates at a voltage of 1.5V ¬±0.075V and supports a data rate of 2133 MT/s with a cycle time of 938ps at a CAS latency of 14. This memory device includes eight internal banks and offers programmable CAS READ and WRITE latencies, as well as a fixed burst length of 8 and burst chop of 4. The reduced tFAW specification allows for a tFAW of 30ns, which is lower than the standard 35ns for DDR3-2133. The operating temperature range is commercial, from 0¬8C to +95¬8C, making it suitable for a variety of applications. The device also features self-refresh capabilities and on-die termination for improved signal integrity.

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 4GBIT PARALLEL 96FBGA

IC DRAM 4GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Memory - MT41J256M16HA-107:E-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 933MHz 20ns 96-FBGA (9x14)

SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 933MHz 20ns 96-FBGA (9x14)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT41J256M16HA-107:E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT41J256M16HA-107:E
Memory IC and Storage Component 774-MT41J256M16HA-107:E
IC DRAM 4GBIT PAR 96FBGA Product overview: MT41J256M16HA-107:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41J256M16HA-10 7:E can be used for catalog matching and distributor lookup.

IC DRAM 4GBIT PAR 96FBGA Product overview: MT41J256M16HA-107:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41J256M16HA-107:E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT41J256M16HA-107:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT41J256M16HA-107:E
Memory - SDRAM - MT41J256M16HA-107:E
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 95°C (TC) Features: SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 933 MHz 20 ns 96-FBGA (9x14) Package: Tray Package: 96-TFBGA Mounting: Surface Mount Part Status: Obsolete Family Name: MT41J256M16 Categories: Integrated Circuits (ICs) Case / Package: 96-FBGA (9x14) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Quantity per package: 1000 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 933 MHz 20 ns 96-FBGA (9x14)
Package: Tray
Package: 96-TFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT41J256M16
Categories: Integrated Circuits (ICs)
Case / Package: 96-FBGA (9x14)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036

Buy Now Datasheet
IC DRAM 4GBIT PARALLEL 96FBGA

IC DRAM 4GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT41J256M16HA-107:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT41J256M16HA-107:E
Integrated Circuits (ICs) - Memory - Memory MT41J256M16HA-107:E
IC DRAM 4GBIT PAR 96FBGA

IC DRAM 4GBIT PAR 96FBGA

Supplier's Site
Memory - MT41J256M16HA-107:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3 Memory IC 4Gbit Parallel 933 MHz 20 ns 96-FBGA (9x14)

SDRAM - DDR3 Memory IC 4Gbit Parallel 933 MHz 20 ns 96-FBGA (9x14)

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT41J256M16HA-107:E MT41J256M16HA-107:E-ND 774-MT41J256M16HA-107:E MT41J256M16HA-107:E MT41J256M16HA-107:E MT41J256M16HA-107:E
Product Name Memory Memory Memory IC and Storage Component Memory - SDRAM - MT41J256M16HA-107:E Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SDRAM - DDR3; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 933 MHz
Access Time 20 ns 20 ns 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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