The MT41J128M16HA-125 IT:D is a DDR3 SDRAM memory chip from Quarktwin Technology Ltd. It features a configuration of 128 Meg x 8 with a total capacity of 1 Gb. The device operates at a voltage of 1.5V ¬±0.075V and supports a clock frequency range of 300,Äì800 MHz. The memory chip has an 8n-bit prefetch architecture and includes 8 internal banks, allowing for efficient data handling. The part supports various CAS latencies (CL) ranging from 5 to 11, with a fixed burst length of 8 and burst chop of 4. It also features on-die termination (ODT) for data, strobe, and mask signals, enhancing signal integrity. The device is designed for commercial and industrial temperature ranges, with a self-refresh mode that operates effectively within a temperature range of 0¬8C to 95¬8C. This memory chip is suitable for applications requiring reliable performance and flexibility in data rates, making it a viable option for engineers looking to integrate DDR3 memory into their designs.
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 13.75ns 96-FBGA (9x14)
IC DRAM 2GBIT PARALLEL 96FBGA Product overview: MT41J128M16HA-125 IT:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41J128M16HA-12
Series: *
Categories: Memory
IC DRAM 2GBIT PARALLEL 96FBGA
IC DRAM 2GBIT PARALLEL 96FBGA
SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA (9x14)
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT41J128M16HA-125IT:D-ND | 774-MT41J128M16HA-125 IT:D | MT41J128M16HA-125 IT:D | MT41J128M16HA-125 IT:D | MT41J128M16HA-125 IT:D | |
| Product Name | Memory | Memory IC and Storage Component | Memory - DDR - MT41J128M16HA-125 IT:D | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | |
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |||
| Package Type | 96-TFBGA | BGA; Tray | BGA; 96-TFBGA | |||
| Supply Voltage | 1.425V ~ 1.575V | 1.425V ~ 1.575V | Surface Mount | 1.425V ~ 1.575V |
