Micron Technology, Inc. Memory MT40A512M8RH-083E AAT:B

Description
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 78-FBGA (9x10.5)
Description
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 78-FBGA (9x10.5)

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SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 78-FBGA (9x10.5)

SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 78-FBGA (9x10.5)

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Integrated Circuits (ICs) - Memory - Memory - MT40A512M8RH-083E AAT:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT40A512M8RH-083E AAT:B
Integrated Circuits (ICs) - Memory - Memory MT40A512M8RH-083E AAT:B
IC DRAM 4GBIT PAR 1.2GHZ 78FBGA

IC DRAM 4GBIT PAR 1.2GHZ 78FBGA

Supplier's Site
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT40A512M8RH-083E AAT:B MT40A512M8RH-083E AAT:B MT40A512M8RH-083E AAT:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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