Micron Technology, Inc. Memory MT40A512M16Z01AWC1

Description
DDR4 8G DIE 512MX16
Datasheet
Description
DDR4 8G DIE 512MX16
Datasheet

Suppliers

Company
Product
Description
Supplier Links
DDR4 8G DIE 512MX16

DDR4 8G DIE 512MX16

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT40A512M16Z01AWC1
Integrated Circuits (ICs) - Memory - Memory MT40A512M16Z01AWC1
IC DRAM 8GBIT PARALLEL WAFER

IC DRAM 8GBIT PARALLEL WAFER

Supplier's Site
Memory - MT40A512M16Z01AWC1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 8Gbit Parallel Wafer

SDRAM - DDR4 Memory IC 8Gbit Parallel Wafer

Buy Now

Technical Specifications

  Lingto Electronic Limited Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT40A512M16Z01AWC1 MT40A512M16Z01AWC1 MT40A512M16Z01AWC1
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXXXXX16MP8PB-45/XX - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 8 905 506 731 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
 - LP3913SQX-ADJ/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - 5962-8670603XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 45 ns
Density 8 kbits
View Details