SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 96-FBGA (7.5x13.5)
IC DRAM 8GBIT PARALLEL 96FBGA
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16LY-062E IT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16LY-06
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR4
Memory Type: Volatile
Memory Size: 8Gb (512M x 16)
Supplier Device Package: 96-FBGA (7.5x13.5)
Temperature Range - Operating: -40°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 1.6GHz
Memory Interface: Parallel
Manufacturer Package: 96-TFBGA
Popularity: Low
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,080
Supply Voltage (V): 1.14V ~ 1.26V
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 96-FBGA (7.5x13.5)
DRAM, 512M X 16BIT, -40 TO 95DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:FBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes
DRAM, DDR4, 8GBIT, -40 TO 95DEG C ROHS COMPLIANT: YES
IC DRAM 8GBIT PARALLEL 96FBGA
IC DRAM 8GBIT PARALLEL 96FBGA
SDRAM, 512M X 16BIT, -40 TO 95DEG C; DRAM MEMORY CONFIGURATION:512M X 16BIT; ACCESS TIME:625PS; PAGE SIZE:2048BYTE; NO. OF PINS:96PINS; MEMORY CASE STYLE:FBGA; OPERATING TEMPERATURE MIN:-40C; OPERATING TEMPERATURE MAX:95C; IC ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Quarktwin Technology Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT40A512M16LY-062EIT:E-ND | MT40A512M16LY-062E IT:E | 774-MT40A512M16LY-062E IT:E | MT40A512M16LY-062E IT:E | 80AH7988 | 91AH7947 | MT40A512M16LY-062E IT:E | MT40A512M16LY-062E IT:E | 108987386 | |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory - SDRAM - MT40A512M16LY-062E IT:E | Memory | Dram, 512M X 16Bit, -40 To 95Deg C; Dram Type Micron | Dram, Ddr4, 8Gbit, -40 To 95Deg C Rohs Compliant Micron | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory Board |
| Memory Category | DRAM Chip | SDRAM - DDR4; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip |
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |||||
| Package Type | 96-TFBGA | 96-TFBGA | BGA; Tray | BGA; 96-TFBGA | FBGA | BGA | ||||
| Supply Voltage | 1.14V ~ 1.26V | 1.14V ~ 1.26V | 1.14V ~ 1.26V | 1.14V ~ 1.26V | 1.14V ~ 1.26V | -40degC ~ 95degC (TC) |
