Micron Technology, Inc. Memory - SDRAM - MT40A512M16LY-062E:E MT40A512M16LY-062E:E

Description
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 95°C (TC) Features: SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6 GHz 96-FBGA (7.5x13.5) Package: 96-TFBGA Package: Tray Mounting: Surface Mount Family Name: MT40A512 Categories: Integrated Circuits (ICs) Case / Package: 96-FBGA (7.5x13.5) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 1080 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0036
  • Memory - SDRAM - MT40A512M16LY-062E:E - Win Source Electronics
    Win Source Electronics
  • Memory IC and Storage Component - 774-MT40A512M16LY-062E:E - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - MT40A512M16LY-062E:E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Memory - MT40A512M16LY-062E:E-ND - DigiKey
    DigiKey
  • Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron - 83AH2722 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Dram, 512M X 16Bit, 0 To 95Deg C Rohs Compliant Micron - 32AJ7531 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Integrated Circuits (ICs) - Memory - Memory - MT40A512M16LY-062E:E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT40A512M16LY-062E:E - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT40A512M16LY-062E:E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Request a Quote Datasheet
Description
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 95°C (TC) Features: SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6 GHz 96-FBGA (7.5x13.5) Package: 96-TFBGA Package: Tray Mounting: Surface Mount Family Name: MT40A512 Categories: Integrated Circuits (ICs) Case / Package: 96-FBGA (7.5x13.5) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 1080 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0036
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT40A512M16LY-062E:E - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT40A512M16LY-062E:E
Memory - SDRAM - MT40A512M16LY-062E:E
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 95°C (TC) Features: SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6 GHz 96-FBGA (7.5x13.5) Package: 96-TFBGA Package: Tray Mounting: Surface Mount Family Name: MT40A512 Categories: Integrated Circuits (ICs) Case / Package: 96-FBGA (7.5x13.5) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Quantity per package: 1080 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6 GHz 96-FBGA (7.5x13.5)
Package: 96-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT40A512
Categories: Integrated Circuits (ICs)
Case / Package: 96-FBGA (7.5x13.5)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 1080
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036

Buy Now Datasheet
Memory IC and Storage Component - 774-MT40A512M16LY-062E:E - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT40A512M16LY-062E:E
Memory IC and Storage Component 774-MT40A512M16LY-062E:E
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16LY-062E:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16LY-06 2E:E can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16LY-062E:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16LY-062E:E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - MT40A512M16LY-062E:E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
MT40A512M16LY-062E:E
Memory MT40A512M16LY-062E:E
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Memory - MT40A512M16LY-062E:E-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
MT40A512M16LY-062E:E-ND
Memory MT40A512M16LY-062E:E-ND
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 96-FBGA (7.5x13.5)

SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 96-FBGA (7.5x13.5)

Buy Now Datasheet
Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron - 83AH2722 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron
83AH2722
Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron 83AH2722
DRAM, 512M X 16BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:FBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

DRAM, 512M X 16BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:FBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

Supplier's Site Datasheet
Dram, 512M X 16Bit, 0 To 95Deg C Rohs Compliant Micron - 32AJ7531 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dram, 512M X 16Bit, 0 To 95Deg C Rohs Compliant Micron
32AJ7531
Dram, 512M X 16Bit, 0 To 95Deg C Rohs Compliant Micron 32AJ7531
DRAM, 512M X 16BIT, 0 TO 95DEG C ROHS COMPLIANT: YES

DRAM, 512M X 16BIT, 0 TO 95DEG C ROHS COMPLIANT: YES

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT40A512M16LY-062E:E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT40A512M16LY-062E:E
Integrated Circuits (ICs) - Memory - Memory MT40A512M16LY-062E:E
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
Memory - MT40A512M16LY-062E:E - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT40A512M16LY-062E:E
Memory MT40A512M16LY-062E:E
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Memory - MT40A512M16LY-062E:E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT40A512M16LY-062E:E
Memory MT40A512M16LY-062E:E
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 96-FBGA (7.5x13.5)

SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 96-FBGA (7.5x13.5)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT40A512M16LY-062E:E MT40A512M16LY-062E:E MT40A512M16LY-062E:E-ND 83AH2722 32AJ7531 MT40A512M16LY-062E:E MT40A512M16LY-062E:E MT40A512M16LY-062E:E
Product Name Memory - SDRAM - MT40A512M16LY-062E:E Memory IC and Storage Component Memory Memory Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron Dram, 512M X 16Bit, 0 To 95Deg C Rohs Compliant Micron Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - DDR4; DRAM Chip DRAM Chip DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type BGA; 96-FBGA (7.5x13.5) BGA; Tray 96-TFBGA 96-TFBGA FBGA BGA; 96-TFBGA
Supply Voltage 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V Surface Mount 1.14V ~ 1.26V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8961413QXA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-8961413QXA
Specs
Memory Category EPROM; EPROM
Access Time 70 ns
Density 1000 kbits
View Details
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS58LC1001
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SN74ACT2229 256 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2229DWR - Texas Instruments
Texas Instruments
SN74ACT2229 256 x 1 x 2 dual independent synchronous FIFO memories
SN74ACT2229DWR
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
SDRAM - 2420768P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420768P
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details