Micron Technology, Inc. Memory MT40A512M16LY-062E AUT:E

Description
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13.5)
Request a Quote Datasheet
Description
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT40A512M16LY-062EAUT:E-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13.5)

SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT40A512M16LY-062E AUT:E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT40A512M16LY-062E AUT:E
Memory IC and Storage Component 774-MT40A512M16LY-062E AUT:E
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16LY-062E AUT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16LY-06 2E AUT:E can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16LY-062E AUT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16LY-062E AUT:E can be used for catalog matching and distributor lookup.

Supplier's Site
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
Memory - DDR - MT40A512M16LY-062E AUT:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - MT40A512M16LY-062E AUT:E
Memory - DDR - MT40A512M16LY-062E AUT:E
Series: * Categories: Memory

Series: *
Categories: Memory

Buy Now
Integrated Circuits (ICs) - Memory MT40A512M16LY-062E AUT:E
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13.5)

SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13.5)

Buy Now
Dram, 512M X 16Bit, -40 To 125Deg C; Dram Type Micron - 80AH7987 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 512M X 16Bit, -40 To 125Deg C; Dram Type Micron
80AH7987
Dram, 512M X 16Bit, -40 To 125Deg C; Dram Type Micron 80AH7987
DRAM, 512M X 16BIT, -40 TO 125DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

DRAM, 512M X 16BIT, -40 TO 125DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT40A512M16LY-062EAUT:E-ND 774-MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E 80AH7987
Product Name Memory Memory IC and Storage Component Memory Memory - DDR - MT40A512M16LY-062E AUT:E Integrated Circuits (ICs) - Memory Memory Memory Dram, 512M X 16Bit, -40 To 125Deg C; Dram Type Micron
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - DDR4; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip DRAM Chip
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 96-TFBGA BGA; Tray 96-TFBGA BGA BGA; 96-TFBGA TFBGA
Supply Voltage 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V
Access Time 19 ns 19 ns 19 ns 19 ns 19 ns 0.6250 ns
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