Micron Technology, Inc. Memory MT40A512M16LY-062E AAT:E

Description
IC DRAM 8GBIT PARALLEL 96FBGA
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Description
IC DRAM 8GBIT PARALLEL 96FBGA
Request a Quote Datasheet

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Description
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IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
Memory - SDRAM - MT40A512M16LY-062E AAT:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT40A512M16LY-062E AAT:E
Memory - SDRAM - MT40A512M16LY-062E AAT:E
Manufacturer: Micron Technology Inc. Series: Automotive, AEC-Q100 Operating Temperature Range: -40°C ~ 105°C (TC) Features: SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13.5) Package: 96-TFBGA Package: Tray Mounting: Surface Mount Family Name: MT40A512 Categories: Integrated Circuits (ICs) Case / Package: 96-FBGA (7.5x13.5) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 1080 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 105°C (TC)
Features: SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13.5)
Package: 96-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT40A512
Categories: Integrated Circuits (ICs)
Case / Package: 96-FBGA (7.5x13.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 1080
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0036

Buy Now
Memory IC and Storage Component - 774-MT40A512M16LY-062E AAT:E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT40A512M16LY-062E AAT:E
Memory IC and Storage Component 774-MT40A512M16LY-062E AAT:E
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16LY-062E AAT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16LY-06 2E AAT:E can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16LY-062E AAT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16LY-062E AAT:E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - MT40A512M16LY-062EAAT:E-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13.5)

SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13.5)

Buy Now Datasheet
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13.5)

SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13.5)

Buy Now
Dram, 512M X 16Bit, -40 To 105Deg C; Dram Type Micron - 80AH7984 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 512M X 16Bit, -40 To 105Deg C; Dram Type Micron
80AH7984
Dram, 512M X 16Bit, -40 To 105Deg C; Dram Type Micron 80AH7984
DRAM, 512M X 16BIT, -40 TO 105DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

DRAM, 512M X 16BIT, -40 TO 105DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory MT40A512M16LY-062E AAT:E
IC DRAM 8GBIT PARALLEL 96FBGA

IC DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT40A512M16LY-062E AAT:E 774-MT40A512M16LY-062E AAT:E MT40A512M16LY-062EAAT:E-ND MT40A512M16LY-062E AAT:E MT40A512M16LY-062E AAT:E 80AH7984 MT40A512M16LY-062E AAT:E
Product Name Memory Memory - SDRAM - MT40A512M16LY-062E AAT:E Memory IC and Storage Component Memory Memory Memory Dram, 512M X 16Bit, -40 To 105Deg C; Dram Type Micron Integrated Circuits (ICs) - Memory
Memory Category SDRAM - DDR4; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip DRAM Chip Volatile; DRAM Chip
Data Rate 1600 MHz 1600 MHz 1600 MHz
Access Time 19 ns 19 ns 19 ns 19 ns 0.6250 ns 19 ns
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 8000000 kbits 8000000 kbits 8000000 kbits 8000000 kbits 8000000 kbits
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