SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13.5)
Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 105°C (TC)
Features: SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13.5)
Package: 96-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT40A512
Categories: Integrated Circuits (ICs)
Case / Package: 96-FBGA (7.5x13.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 1080
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0036
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16LY-062E AAT:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16LY-06
IC DRAM 8GBIT PARALLEL 96FBGA
IC DRAM 8GBIT PARALLEL 96FBGA
IC DRAM 8GBIT PARALLEL 96FBGA
DRAM, 512M X 16BIT, -40 TO 105DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13.5)
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT40A512M16LY-062EAAT:E-ND | 774-MT40A512M16LY-062E AAT:E | MT40A512M16LY-062E AAT:E | MT40A512M16LY-062E AAT:E | MT40A512M16LY-062E AAT:E | 80AH7984 | MT40A512M16LY-062E AAT:E | |
| Product Name | Memory | Memory - SDRAM - MT40A512M16LY-062E AAT:E | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | Dram, 512M X 16Bit, -40 To 105Deg C; Dram Type Micron | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR4; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Package Type | 96-TFBGA | BGA; 96-FBGA (7.5x13.5) | BGA; Tray | 96-TFBGA | BGA | TFBGA | BGA; 96-TFBGA | |
| Supply Voltage | 1.14V ~ 1.26V | 1.14V ~ 1.26V | 1.14V ~ 1.26V | 1.14V ~ 1.26V | 1.14V ~ 1.26V | |||
| Access Time | 19 ns | 19 ns | 19 ns | 19 ns | 0.6250 ns | 19 ns |
