Micron Technology, Inc. Memory MT40A4G4VA-062EPS:B

Description
MOD DRAM 16GBIT PARALLEL 78FBGA
Datasheet
Description
MOD DRAM 16GBIT PARALLEL 78FBGA
Datasheet

Suppliers

Company
Product
Description
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MOD DRAM 16GBIT PARALLEL 78FBGA

MOD DRAM 16GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - MT40A4G4VA-062EPS:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (10x11)

SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (10x11)

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Integrated Circuits (ICs) - Memory - MT40A4G4VA-062EPS:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT40A4G4VA-062EPS:B
Integrated Circuits (ICs) - Memory MT40A4G4VA-062EPS:B
MOD DRAM 16GBIT PARALLEL 78FBGA

MOD DRAM 16GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT40A4G4VA-062EPS:B MT40A4G4VA-062EPS:B MT40A4G4VA-062EPS:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 19 ns 19 ns 19 ns
Density 16000000 kbits 16000000 kbits 16000000 kbits
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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