Micron Technology, Inc. Memory MT40A4G4VA-062EPS:B

Description
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (10x11)
Datasheet
Description
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (10x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT40A4G4VA-062EPS:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (10x11)

SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (10x11)

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Integrated Circuits (ICs) - Memory - MT40A4G4VA-062EPS:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT40A4G4VA-062EPS:B
Integrated Circuits (ICs) - Memory MT40A4G4VA-062EPS:B
MOD DRAM 16GBIT PARALLEL 78FBGA

MOD DRAM 16GBIT PARALLEL 78FBGA

Supplier's Site
MOD DRAM 16GBIT PARALLEL 78FBGA

MOD DRAM 16GBIT PARALLEL 78FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT40A4G4VA-062EPS:B MT40A4G4VA-062EPS:B MT40A4G4VA-062EPS:B
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 19 ns 19 ns 19 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Density 16000000 kbits 16000000 kbits 16000000 kbits
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