Micron Technology, Inc. Memory - SDRAM - MT40A2G8VA-062E:B MT40A2G8VA-062E:B

Description
Manufacturer: Micron Technology Inc. Features: Memory IC 1.6 GHz 19 ns Package: Tray Family Name: MT40A2 Categories: Integrated Circuits (ICs) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 90 pct. Supply and Demand Status: Limited Quantity per package: 1140 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks HTSUS: 8542.32.0036
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Description
Manufacturer: Micron Technology Inc. Features: Memory IC 1.6 GHz 19 ns Package: Tray Family Name: MT40A2 Categories: Integrated Circuits (ICs) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 90 pct. Supply and Demand Status: Limited Quantity per package: 1140 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks HTSUS: 8542.32.0036
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - MT40A2G8VA-062E:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT40A2G8VA-062E:B
Memory - SDRAM - MT40A2G8VA-062E:B
Manufacturer: Micron Technology Inc. Features: Memory IC 1.6 GHz 19 ns Package: Tray Family Name: MT40A2 Categories: Integrated Circuits (ICs) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 90 pct. Supply and Demand Status: Limited Quantity per package: 1140 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Features: Memory IC 1.6 GHz 19 ns
Package: Tray
Family Name: MT40A2
Categories: Integrated Circuits (ICs)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 90 pct.
Supply and Demand Status: Limited
Quantity per package: 1140
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0036

Buy Now Datasheet
Memory - MT40A2G8VA-062E:B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR4 Memory IC 16Gb (4G x 4) Parallel 1.6GHz 19ns 78-FBGA (10x11)

SDRAM - DDR4 Memory IC 16Gb (4G x 4) Parallel 1.6GHz 19ns 78-FBGA (10x11)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT40A2G8VA-062E:B - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT40A2G8VA-062E:B
Memory IC and Storage Component 774-MT40A2G8VA-062E:B
IC DRAM 16GBIT PARALLEL 78FBGA Product overview: MT40A2G8VA-062E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A2G8VA-062E: B can be used for catalog matching and distributor lookup.

IC DRAM 16GBIT PARALLEL 78FBGA Product overview: MT40A2G8VA-062E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A2G8VA-062E:B can be used for catalog matching and distributor lookup.

Supplier's Site
Dram, 2G X 8Bit, 0 To 95Deg C; Dram Type Micron - 80AH7972 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 2G X 8Bit, 0 To 95Deg C; Dram Type Micron
80AH7972
Dram, 2G X 8Bit, 0 To 95Deg C; Dram Type Micron 80AH7972
DRAM, 2G X 8BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:16Gbit; DRAM Memory Configuration:2G x 8bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:78Pins; Supply Voltage Nom:1.2V; Access Time:625ps; Product Range:-RoHS Compliant: Yes

DRAM, 2G X 8BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:16Gbit; DRAM Memory Configuration:2G x 8bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:78Pins; Supply Voltage Nom:1.2V; Access Time:625ps; Product Range:-RoHS Compliant: Yes

Supplier's Site Datasheet
IC DRAM 16GBIT PARALLEL 78FBGA

IC DRAM 16GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
IC DRAM 16GBIT PARALLEL 78FBGA

IC DRAM 16GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - MT40A2G8VA-062E:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (10x11)

SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 19 ns 78-FBGA (10x11)

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company ODG (Origin Data Global) Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT40A2G8VA-062E:B-ND 774-MT40A2G8VA-062E:B 80AH7972 MT40A2G8VA-062E:B MT40A2G8VA-062E:B MT40A2G8VA-062E:B
Product Name Memory - SDRAM - MT40A2G8VA-062E:B Memory Memory IC and Storage Component Dram, 2G X 8Bit, 0 To 95Deg C; Dram Type Micron Memory Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM Chip SDRAM - DDR4; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type 78-TFBGA BGA; Tray TFBGA 78-TFBGA BGA; 78-TFBGA
Supply Voltage 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V
Access Time 19 ns 0.6250 ns 19 ns 19 ns 19 ns
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