Micron Technology, Inc. Memory MT40A2G8NEA-062E:R TR

Description
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 13.75 ns 78-FBGA (7.5x11)
Description
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 13.75 ns 78-FBGA (7.5x11)

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SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 13.75 ns 78-FBGA (7.5x11)

SDRAM - DDR4 Memory IC 16Gbit Parallel 1.6 GHz 13.75 ns 78-FBGA (7.5x11)

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MOD DRAM 16GBIT PARALLEL 78FBGA

MOD DRAM 16GBIT PARALLEL 78FBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - MT40A2G8NEA-062E:R TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT40A2G8NEA-062E:R TR
Integrated Circuits (ICs) - Memory MT40A2G8NEA-062E:R TR
MOD DRAM 16GBIT PARALLEL 78FBGA

MOD DRAM 16GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT40A2G8NEA-062E:R TR MT40A2G8NEA-062E:R TR MT40A2G8NEA-062E:R TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 13.75 ns 13.75 ns 13.75 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Density 16000000 kbits 16000000 kbits 16000000 kbits
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