Micron Technology, Inc. Memory MT40A2G4WE-075E:B

Description
SDRAM - DDR4 Memory IC 8Gb (2G x 4) Parallel 1.33GHz 78-FBGA (8x12)
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Description
SDRAM - DDR4 Memory IC 8Gb (2G x 4) Parallel 1.33GHz 78-FBGA (8x12)
Request a Quote
Datasheet
Datasheet Summary
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The MT40A2G4WE-075E:B is an 8Gb DDR4 SDRAM memory IC from Quarktwin Technology Ltd., designed for high-performance applications. It features a configuration of 2 Gig x 4 and operates at a data rate of 2666 MT/s with a CAS latency of 19. The memory operates at a voltage of 1.2V and supports various advanced features such as write leveling, temperature-controlled refresh, and low-power auto self-refresh. The device is housed in a 78-ball FBGA package, measuring 8.0mm x 12.0mm. It is suitable for commercial temperature ranges from 0¬8C to 95¬8C. This memory IC is compliant with JEDEC standards and offers a range of internal banks and addressing capabilities, making it a versatile choice for engineers looking to integrate DDR4 memory into their designs.

Datasheet Summary
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The MT40A2G4WE-075E:B is an 8Gb DDR4 SDRAM memory IC from Quarktwin Technology Ltd., designed for high-performance applications. It features a configuration of 2 Gig x 4 and operates at a data rate of 2666 MT/s with a CAS latency of 19. The memory operates at a voltage of 1.2V and supports various advanced features such as write leveling, temperature-controlled refresh, and low-power auto self-refresh. The device is housed in a 78-ball FBGA package, measuring 8.0mm x 12.0mm. It is suitable for commercial temperature ranges from 0¬8C to 95¬8C. This memory IC is compliant with JEDEC standards and offers a range of internal banks and addressing capabilities, making it a versatile choice for engineers looking to integrate DDR4 memory into their designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT40A2G4WE-075E:B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR4 Memory IC 8Gb (2G x 4) Parallel 1.33GHz 78-FBGA (8x12)

SDRAM - DDR4 Memory IC 8Gb (2G x 4) Parallel 1.33GHz 78-FBGA (8x12)

Buy Now Datasheet
Memory - DDR - MT40A2G4WE-075E:B -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - MT40A2G4WE-075E:B
Memory - DDR - MT40A2G4WE-075E:B
Series: * Categories: Memory

Series: *
Categories: Memory

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Integrated Circuits (ICs) - Memory - Memory - MT40A2G4WE-075E:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT40A2G4WE-075E:B
Integrated Circuits (ICs) - Memory - Memory MT40A2G4WE-075E:B
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site
Memory - MT40A2G4WE-075E:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.33 GHz 78-FBGA (8x12)

SDRAM - DDR4 Memory IC 8Gbit Parallel 1.33 GHz 78-FBGA (8x12)

Buy Now Datasheet
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT40A2G4WE-075E:B-ND MT40A2G4WE-075E:B MT40A2G4WE-075E:B MT40A2G4WE-075E:B
Product Name Memory Memory - DDR - MT40A2G4WE-075E:B Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type 78-TFBGA BGA; 78-TFBGA
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