The MT40A2G4WE-075E:B is an 8Gb DDR4 SDRAM memory IC from Quarktwin Technology Ltd., designed for high-performance applications. It features a configuration of 2 Gig x 4 and operates at a data rate of 2666 MT/s with a CAS latency of 19. The memory operates at a voltage of 1.2V and supports various advanced features such as write leveling, temperature-controlled refresh, and low-power auto self-refresh. The device is housed in a 78-ball FBGA package, measuring 8.0mm x 12.0mm. It is suitable for commercial temperature ranges from 0¬8C to 95¬8C. This memory IC is compliant with JEDEC standards and offers a range of internal banks and addressing capabilities, making it a versatile choice for engineers looking to integrate DDR4 memory into their designs.
SDRAM - DDR4 Memory IC 8Gb (2G x 4) Parallel 1.33GHz 78-FBGA (8x12)
IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT40A2G4WE-075E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A2G4WE-075E:
Series: *
Categories: Memory
IC DRAM 8GBIT PARALLEL 78FBGA
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.33 GHz 78-FBGA (8x12)
IC DRAM 8GBIT PARALLEL 78FBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT40A2G4WE-075E:B-ND | 774-MT40A2G4WE-075E:B | MT40A2G4WE-075E:B | MT40A2G4WE-075E:B | MT40A2G4WE-075E:B | |
| Product Name | Memory | Memory IC and Storage Component | Memory - DDR - MT40A2G4WE-075E:B | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | |||
| Package Type | 78-TFBGA | BGA; Tray | BGA; 78-TFBGA |
