Micron Technology, Inc. Memory MT40A256M16LY-062E:F

Description
SDRAM - DDR4 Memory IC 4Gb (256M x 16) Parallel 1.6GHz 13.75ns 96-FBGA (7.5x13.5)
  • Memory - MT40A256M16LY-062E:F-ND - DigiKey
    DigiKey
  • Memory IC and Storage Component - 774-MT40A256M16LY-062E:F - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - SDRAM - MT40A256M16LY-062E:F - Win Source Electronics
    Win Source Electronics
  • Memory - MT40A256M16LY-062E:F - Lingto Electronic Limited
    Lingto Electronic Limited
  • Integrated Circuits (ICs) - Memory - DDR SDRAM - MT40A256M16LY-062E:F - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT40A256M16LY-062E:F - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Dram, 256M X 16Bit, 0 To 95Deg C; Dram Type Micron - 80AH7977 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Memory - MT40A256M16LY-062E:F - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Request a Quote Datasheet
Description
SDRAM - DDR4 Memory IC 4Gb (256M x 16) Parallel 1.6GHz 13.75ns 96-FBGA (7.5x13.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT40A256M16LY-062E:F-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
MT40A256M16LY-062E:F-ND
Memory MT40A256M16LY-062E:F-ND
SDRAM - DDR4 Memory IC 4Gb (256M x 16) Parallel 1.6GHz 13.75ns 96-FBGA (7.5x13.5)

SDRAM - DDR4 Memory IC 4Gb (256M x 16) Parallel 1.6GHz 13.75ns 96-FBGA (7.5x13.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT40A256M16LY-062E:F - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT40A256M16LY-062E:F
Memory IC and Storage Component 774-MT40A256M16LY-062E:F
IC DRAM 4GBIT PARALLEL 96FBGA Product overview: MT40A256M16LY-062E:F from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A256M16LY-06 2E:F can be used for catalog matching and distributor lookup.

IC DRAM 4GBIT PARALLEL 96FBGA Product overview: MT40A256M16LY-062E:F from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A256M16LY-062E:F can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT40A256M16LY-062E:F - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT40A256M16LY-062E:F
Memory - SDRAM - MT40A256M16LY-062E:F
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 95°C (TC) Features: SDRAM - DDR4 Memory IC 4Gb (256M x 16) Parallel 1.6 GHz 13.75 ns 96-FBGA (7.5x13.5) Package: 96-TFBGA Package: Tray Mounting: Surface Mount Family Name: MT40A256 Categories: Integrated Circuits (ICs) Case / Package: 96-FBGA (7.5x13.5) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 1 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: SDRAM - DDR4 Memory IC 4Gb (256M x 16) Parallel 1.6 GHz 13.75 ns 96-FBGA (7.5x13.5)
Package: 96-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT40A256
Categories: Integrated Circuits (ICs)
Case / Package: 96-FBGA (7.5x13.5)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 1
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0036

Buy Now Datasheet
Memory - MT40A256M16LY-062E:F - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT40A256M16LY-062E:F
Memory MT40A256M16LY-062E:F
IC DRAM 4GBIT PARALLEL 96FBGA

IC DRAM 4GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - DDR SDRAM - MT40A256M16LY-062E:F - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - DDR SDRAM
MT40A256M16LY-062E:F
Integrated Circuits (ICs) - Memory - DDR SDRAM MT40A256M16LY-062E:F
Integrated Circuits (ICs) - Memory - DDR SDRAM

Integrated Circuits (ICs) - Memory - DDR SDRAM

Supplier's Site
Memory - MT40A256M16LY-062E:F - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
MT40A256M16LY-062E:F
Memory MT40A256M16LY-062E:F
IC DRAM 4GBIT PARALLEL 96FBGA

IC DRAM 4GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Dram, 256M X 16Bit, 0 To 95Deg C; Dram Type Micron - 80AH7977 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dram, 256M X 16Bit, 0 To 95Deg C; Dram Type Micron
80AH7977
Dram, 256M X 16Bit, 0 To 95Deg C; Dram Type Micron 80AH7977
DRAM, 256M X 16BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:4Gbit; DRAM Memory Configuration:256M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

DRAM, 256M X 16BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:4Gbit; DRAM Memory Configuration:256M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:TFBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - MT40A256M16LY-062E:F - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT40A256M16LY-062E:F
Memory MT40A256M16LY-062E:F
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 13.75 ns 96-FBGA (7.5x13.5)

SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 13.75 ns 96-FBGA (7.5x13.5)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT40A256M16LY-062E:F-ND 774-MT40A256M16LY-062E:F MT40A256M16LY-062E:F MT40A256M16LY-062E:F MT40A256M16LY-062E:F 80AH7977 MT40A256M16LY-062E:F
Product Name Memory Memory IC and Storage Component Memory - SDRAM - MT40A256M16LY-062E:F Memory Integrated Circuits (ICs) - Memory - DDR SDRAM Memory Dram, 256M X 16Bit, 0 To 95Deg C; Dram Type Micron Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip SDRAM - DDR4; DRAM Chip DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type 96-TFBGA BGA; Tray BGA; 96-FBGA (7.5x13.5) 96-TFBGA TFBGA BGA; 96-TFBGA
Supply Voltage 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V
Access Time 13.75 ns 13.75 ns 13.75 ns 0.6250 ns 13.75 ns
Unlock Full Specs
to access all available technical data

Similar Products

- 27S85ALM/B - Rochester Electronics
Rochester Electronics
Integrated Circuits (ICs) - Memory - Memory
27S85ALM/B
Specs
Memory Category PROM
Package Type LCC
View Details
2 suppliers
Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882864P
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8E128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 457780-2840 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
457780-2840
View Details