Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT40A256M16GE-062E:B TR

Description
IC DRAM 4GBIT PARALLEL 96FBGA
Description
IC DRAM 4GBIT PARALLEL 96FBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT40A256M16GE-062E:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT40A256M16GE-062E:B TR
Integrated Circuits (ICs) - Memory - Memory MT40A256M16GE-062E:B TR
IC DRAM 4GBIT PARALLEL 96FBGA

IC DRAM 4GBIT PARALLEL 96FBGA

Supplier's Site
IC DRAM 4GBIT PARALLEL 96FBGA

IC DRAM 4GBIT PARALLEL 96FBGA

Supplier's Site
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 96-FBGA (9x14)

SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 96-FBGA (9x14)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT40A256M16GE-062E:B TR MT40A256M16GE-062E:B TR MT40A256M16GE-062E:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 1600 MHz
Density 4000000 kbits 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8F2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 90 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 2220533 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 27S41ADM/B - Lingto Electronic Limited
Rochester Electronics
View Details
3 suppliers