Micron Technology, Inc. Memory IC and Storage Component MT40A1G8SA-062E:E

Description
IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT40A1G8SA-062E:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A1G8SA-062E: E can be used for catalog matching and distributor lookup.
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Description
IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT40A1G8SA-062E:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A1G8SA-062E: E can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The MT40A1G8SA-062E:E is an 8Gb DDR4 SDRAM memory IC from Quarktwin Technology Ltd., designed for high-performance applications. It operates at a data rate of 3200 MT/s with a CAS latency of 22, providing efficient data processing capabilities. The memory requires a supply voltage of 1.2V and features a 78-ball FBGA package measuring 7.5mm x 11mm. This memory IC supports various advanced features, including on-die termination, programmable data strobe preambles, and multiple self-refresh modes, which enhance power efficiency and reliability. It also includes a fine granularity refresh capability and supports temperature-controlled refresh, making it suitable for a range of operating conditions. The device is compliant with JEDEC standards, ensuring compatibility with industry specifications. Engineers considering this memory IC for their projects will find it suitable for applications requiring high-speed data access and robust performance under varying thermal conditions.

Datasheet Summary
Powered by GS/AI

The MT40A1G8SA-062E:E is an 8Gb DDR4 SDRAM memory IC from Quarktwin Technology Ltd., designed for high-performance applications. It operates at a data rate of 3200 MT/s with a CAS latency of 22, providing efficient data processing capabilities. The memory requires a supply voltage of 1.2V and features a 78-ball FBGA package measuring 7.5mm x 11mm. This memory IC supports various advanced features, including on-die termination, programmable data strobe preambles, and multiple self-refresh modes, which enhance power efficiency and reliability. It also includes a fine granularity refresh capability and supports temperature-controlled refresh, making it suitable for a range of operating conditions. The device is compliant with JEDEC standards, ensuring compatibility with industry specifications. Engineers considering this memory IC for their projects will find it suitable for applications requiring high-speed data access and robust performance under varying thermal conditions.

Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-MT40A1G8SA-062E:E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT40A1G8SA-062E:E
Memory IC and Storage Component 774-MT40A1G8SA-062E:E
IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT40A1G8SA-062E:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A1G8SA-062E: E can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 78FBGA Product overview: MT40A1G8SA-062E:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A1G8SA-062E:E can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - SDRAM - MT40A1G8SA-062E:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT40A1G8SA-062E:E
Memory - SDRAM - MT40A1G8SA-062E:E
Manufacturer: Micron Technology Inc. Operating Temperature Range: 0°C ~ 95°C (TC) Features: SDRAM - DDR4 Memory IC 8Gb (1G x 8) Parallel 1.6 GHz 78-FBGA (7.5x11) Package: 78-TFBGA Package: Tray Mounting: Surface Mount Family Name: MT40A1 Categories: Integrated Circuits (ICs) Case / Package: 78-FBGA (7.5x11) ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 91 pct. Supply and Demand Status: Limited Quantity per package: 1260 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: SDRAM - DDR4 Memory IC 8Gb (1G x 8) Parallel 1.6 GHz 78-FBGA (7.5x11)
Package: 78-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT40A1
Categories: Integrated Circuits (ICs)
Case / Package: 78-FBGA (7.5x11)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Limited
Quantity per package: 1260
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036

Buy Now Datasheet
Memory - MT40A1G8SA-062E:E-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR4 Memory IC 8Gb (1G x 8) Parallel 1.6GHz 78-FBGA (7.5x11)

SDRAM - DDR4 Memory IC 8Gb (1G x 8) Parallel 1.6GHz 78-FBGA (7.5x11)

Buy Now Datasheet
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Dram, 1G X 8Bit, 0 To 95Deg C Rohs Compliant Micron - 32AJ7528 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 1G X 8Bit, 0 To 95Deg C Rohs Compliant Micron
32AJ7528
Dram, 1G X 8Bit, 0 To 95Deg C Rohs Compliant Micron 32AJ7528
DRAM, 1G X 8BIT, 0 TO 95DEG C ROHS COMPLIANT: YES

DRAM, 1G X 8BIT, 0 TO 95DEG C ROHS COMPLIANT: YES

Supplier's Site
Dram, 1G X 8Bit, 0 To 95Deg C; Dram Type Micron - 83AH2719 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 1G X 8Bit, 0 To 95Deg C; Dram Type Micron
83AH2719
Dram, 1G X 8Bit, 0 To 95Deg C; Dram Type Micron 83AH2719
DRAM, 1G X 8BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:1G x 8bit; Clock Frequency:1.6GHz; Memory Case Style:FBGA; No. of Pins:78Pins; Supply Voltage Nom:1.2V; Access Time:625ps; Product Range:- RoHS Compliant: Yes

DRAM, 1G X 8BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:1G x 8bit; Clock Frequency:1.6GHz; Memory Case Style:FBGA; No. of Pins:78Pins; Supply Voltage Nom:1.2V; Access Time:625ps; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - MT40A1G8SA-062E:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 78-FBGA (7.5x11)

SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 78-FBGA (7.5x11)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT40A1G8SA-062E:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT40A1G8SA-062E:E
Integrated Circuits (ICs) - Memory - Memory MT40A1G8SA-062E:E
IC DRAM 8GBIT PARALLEL 78FBGA

IC DRAM 8GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Lingto Electronic Limited ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT40A1G8SA-062E:E MT40A1G8SA-062E:E-ND MT40A1G8SA-062E:E MT40A1G8SA-062E:E 32AJ7528 83AH2719 MT40A1G8SA-062E:E MT40A1G8SA-062E:E
Product Name Memory IC and Storage Component Memory - SDRAM - MT40A1G8SA-062E:E Memory Memory Memory Dram, 1G X 8Bit, 0 To 95Deg C Rohs Compliant Micron Dram, 1G X 8Bit, 0 To 95Deg C; Dram Type Micron Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip DRAM Chip DRAM Chip DRAM; DRAM Chip SDRAM - DDR4; DRAM Chip DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 13.75 ns 0.6250 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Address Bus Width 8 bits
Package Type BGA; Tray BGA; 78-FBGA (7.5x11) 78-TFBGA 78-TFBGA FBGA BGA; 78-TFBGA
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