Micron Technology, Inc. Memory MT40A1G4SA-062E:F

Description
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 19 ns 78-FBGA (7.5x11)
Datasheet
Description
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 19 ns 78-FBGA (7.5x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT40A1G4SA-062E:F - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 19 ns 78-FBGA (7.5x11)

SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 19 ns 78-FBGA (7.5x11)

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MODULE DRAM DDR

MODULE DRAM DDR

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT40A1G4SA-062E:F - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT40A1G4SA-062E:F
Integrated Circuits (ICs) - Memory - Memory MT40A1G4SA-062E:F
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site
Dram, 1G X 4Bit, 0 To 95Deg C; Dram Type Micron - 80AH7950 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 1G X 4Bit, 0 To 95Deg C; Dram Type Micron
80AH7950
Dram, 1G X 4Bit, 0 To 95Deg C; Dram Type Micron 80AH7950
DRAM, 1G X 4BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:4Gbit; DRAM Memory Configuration:1G x 4bit; Clock Frequency:-; Memory Case Style:FBGA; No. of Pins:78Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

DRAM, 1G X 4BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:4Gbit; DRAM Memory Configuration:1G x 4bit; Clock Frequency:-; Memory Case Style:FBGA; No. of Pins:78Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT40A1G4SA-062E:F MT40A1G4SA-062E:F MT40A1G4SA-062E:F 80AH7950
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Dram, 1G X 4Bit, 0 To 95Deg C; Dram Type Micron
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip
Access Time 19 ns 19 ns 0.6250 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits 4000000 kbits
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