Micron Technology, Inc. Memory MT40A1G4RH-083E:B TR

Description
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 19 ns 78-FBGA (9x10.5)
Description
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 19 ns 78-FBGA (9x10.5)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT40A1G4RH-083E:B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 19 ns 78-FBGA (9x10.5)

SDRAM - DDR4 Memory IC 4Gbit Parallel 1.2 GHz 19 ns 78-FBGA (9x10.5)

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IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - MT40A1G4RH-083E:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT40A1G4RH-083E:B TR
Integrated Circuits (ICs) - Memory MT40A1G4RH-083E:B TR
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT40A1G4RH-083E:B TR MT40A1G4RH-083E:B TR MT40A1G4RH-083E:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 19 ns 19 ns 19 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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