Manufacturer: Micron Technology Inc.
Features: Memory IC 1.33 GHz 19 ns
Package: Reel - TR
Family Name: MT40A1
Categories: Integrated Circuits (ICs)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
HTSUS: 8542.32.0036
IC DRAM 16GBIT PARALLEL 78FBGA Product overview: MT40A1G16KNR-075:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A1G16KNR-075
SDRAM - DDR4 Memory IC 16Gb (1G x 16) Parallel 1.33GHz 19ns 78-FBGA (8x12)
SDRAM - DDR4 Memory IC 16Gbit Parallel 1.33 GHz 19 ns 78-FBGA (8x12)
IC DRAM 16GBIT PAR 96FBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT40A1G16KNR-075:E TR | MT40A1G16KNR-075:ETR-ND | MT40A1G16KNR-075:E TR | MT40A1G16KNR-075:E TR | MT40A1G16KNR-075:E TR | |
| Product Name | Memory - SDRAM - MT40A1G16KNR-075:E TR | Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 19 ns | 19 ns | 19 ns | 19 ns | ||
| Cycle Time | 15 ns | |||||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) |
