Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F6T08ETCBBM5-37ES:B TR

Description
IC FLASH 6TBIT PARALLEL 267MHZ
  • Memory - MT29F6T08ETCBBM5-37ES:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F6T08ETCBBM5-37ES:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
IC FLASH 6TBIT PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F6T08ETCBBM5-37ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F6T08ETCBBM5-37ES:B TR
IC FLASH 6TBIT PARALLEL 267MHZ

IC FLASH 6TBIT PARALLEL 267MHZ

Supplier's Site
Memory - MT29F6T08ETCBBM5-37ES:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F6T08ETCBBM5-37ES:B TR
Memory MT29F6T08ETCBBM5-37ES:B TR
FLASH - NAND Memory IC 6Tbit Parallel 267 MHz

FLASH - NAND Memory IC 6Tbit Parallel 267 MHz

Buy Now
Memory - MT29F6T08ETCBBM5-37ES:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F6T08ETCBBM5-37ES:B TR
Memory MT29F6T08ETCBBM5-37ES:B TR
IC FLASH 6TB PARALLEL 267MHZ

IC FLASH 6TB PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F6T08ETCBBM5-37ES:B TR MT29F6T08ETCBBM5-37ES:B TR MT29F6T08ETCBBM5-37ES:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Flash
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