Micron Technology, Inc. Memory - Flash - MT29F64G08CBABBWPR:B MT29F64G08CBABBWPR:B

Description
Manufacturer: Micron Technology Inc. Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 64Gb (8G x 8) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 960 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V
  • Memory - Flash - MT29F64G08CBABBWPR:B - Win Source Electronics
    Win Source Electronics
  • Memory IC and Storage Component - 774-MT29F64G08CBABBWPR:B - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Mlc64G8Gx8Tsop, Tray Rohs Compliant Micron - 80AH7819 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Memory - MT29F64G08CBABBWPR:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F64G08CBABBWPR:B - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Integrated Circuits (ICs) - Memory - Memory - MT29F64G08CBABBWPR:B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Memory - MT29F64G08CBABBWPR:B - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Micron Technology Inc. Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 64Gb (8G x 8) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 960 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F64G08CBABBWPR:B - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F64G08CBABBWPR:B
Memory - Flash - MT29F64G08CBABBWPR:B
Manufacturer: Micron Technology Inc. Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 64Gb (8G x 8) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Popularity: Medium Fake Threat In the Open Market: 79 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 960 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V

Manufacturer: Micron Technology Inc.
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 64Gb (8G x 8)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: FLASH
Memory Interface: Parallel
Popularity: Medium
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 960
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.7V ~ 3.6V

Buy Now
Memory IC and Storage Component - 774-MT29F64G08CBABBWPR:B - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT29F64G08CBABBWPR:B
Memory IC and Storage Component 774-MT29F64G08CBABBWPR:B
IC FLASH 64GBIT PAR 48TSOP I Product overview: MT29F64G08CBABBWPR:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F64G08CBABBW PR:B can be used for catalog matching and distributor lookup.

IC FLASH 64GBIT PAR 48TSOP I Product overview: MT29F64G08CBABBWPR:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F64G08CBABBWPR:B can be used for catalog matching and distributor lookup.

Supplier's Site
Mlc64G8Gx8Tsop, Tray Rohs Compliant Micron - 80AH7819 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mlc64G8Gx8Tsop, Tray Rohs Compliant Micron
80AH7819
Mlc64G8Gx8Tsop, Tray Rohs Compliant Micron 80AH7819
MLC64G8GX8TSOP, TRAY ROHS COMPLIANT: YES

MLC64G8GX8TSOP, TRAY ROHS COMPLIANT: YES

Supplier's Site
Memory - MT29F64G08CBABBWPR:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F64G08CBABBWPR:B
Memory MT29F64G08CBABBWPR:B
FLASH - NAND Memory IC 64Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 64Gbit Parallel 48-TSOP I

Buy Now
Memory - MT29F64G08CBABBWPR:B - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
MT29F64G08CBABBWPR:B
Memory MT29F64G08CBABBWPR:B
IC FLASH 64GBIT PAR 48TSOP I

IC FLASH 64GBIT PAR 48TSOP I

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F64G08CBABBWPR:B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F64G08CBABBWPR:B
Integrated Circuits (ICs) - Memory - Memory MT29F64G08CBABBWPR:B
IC FLASH 64GBIT PAR 48TSOP I

IC FLASH 64GBIT PAR 48TSOP I

Supplier's Site
Memory - MT29F64G08CBABBWPR:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F64G08CBABBWPR:B
Memory MT29F64G08CBABBWPR:B
IC FLASH 64GBIT PARALLEL 48TSOP

IC FLASH 64GBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Quarktwin Technology Ltd. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F64G08CBABBWPR:B 80AH7819 MT29F64G08CBABBWPR:B MT29F64G08CBABBWPR:B MT29F64G08CBABBWPR:B MT29F64G08CBABBWPR:B
Product Name Memory - Flash - MT29F64G08CBABBWPR:B Memory IC and Storage Component Mlc64G8Gx8Tsop, Tray Rohs Compliant Micron Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile Flash; FLASH Flash; FLASH - NAND Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Supply Voltage 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V 2.7V ~ 3.6V 0degC ~ 70degC (TA)
Address Bus Width 8 bits
Unlock Full Specs
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