Micron Technology, Inc. Memory MT29F64G08AECDBJ4-6ITR:D TR

Description
FLASH - NAND Memory IC 64Gbit Parallel 166 MHz 132-VBGA (12x18)
Description
FLASH - NAND Memory IC 64Gbit Parallel 166 MHz 132-VBGA (12x18)

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Description
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FLASH - NAND Memory IC 64Gbit Parallel 166 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 64Gbit Parallel 166 MHz 132-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29F64G08AECDBJ4-6ITR:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F64G08AECDBJ4-6ITR:D TR
Integrated Circuits (ICs) - Memory - Memory MT29F64G08AECDBJ4-6ITR:D TR
IC FLASH 64GBIT PAR 132VBGA

IC FLASH 64GBIT PAR 132VBGA

Supplier's Site
IC FLASH 64GBIT PARALLEL 132VBGA

IC FLASH 64GBIT PARALLEL 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F64G08AECDBJ4-6ITR:D TR MT29F64G08AECDBJ4-6ITR:D TR MT29F64G08AECDBJ4-6ITR:D TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000000 kbits 64000000 kbits 64000000 kbits
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