Micron Technology, Inc. Memory MT29F64G08AEAAAC5:A

Description
FLASH - NAND Memory IC 64Gbit Parallel 52-VLGA (18x14)
Datasheet
Description
FLASH - NAND Memory IC 64Gbit Parallel 52-VLGA (18x14)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F64G08AEAAAC5:A - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 64Gbit Parallel 52-VLGA (18x14)

FLASH - NAND Memory IC 64Gbit Parallel 52-VLGA (18x14)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F64G08AEAAAC5:A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F64G08AEAAAC5:A
Integrated Circuits (ICs) - Memory - Memory MT29F64G08AEAAAC5:A
IC FLASH 64GBIT PARALLEL 52VLGA

IC FLASH 64GBIT PARALLEL 52VLGA

Supplier's Site
IC FLASH 64GBIT PARALLEL 52VLGA

IC FLASH 64GBIT PARALLEL 52VLGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F64G08AEAAAC5:A MT29F64G08AEAAAC5:A MT29F64G08AEAAAC5:A
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 580536-002-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8SLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28C64AX-20B/XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 64 kbits
View Details
SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details