Micron Technology, Inc. Memory MT29F512G08EMCBBJ5-6:B.001

Description
IC FLASH 512GBIT PARALLEL 167MHZ
  • Memory - MT29F512G08EMCBBJ5-6:B.001 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Integrated Circuits (ICs) - Memory - Memory - MT29F512G08EMCBBJ5-6:B.001 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
  • Memory - MT29F512G08EMCBBJ5-6:B.001 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 512GBIT PARALLEL 167MHZ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F512G08EMCBBJ5-6:B.001 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08EMCBBJ5-6:B.001
Memory MT29F512G08EMCBBJ5-6:B.001
IC FLASH 512GBIT PARALLEL 167MHZ

IC FLASH 512GBIT PARALLEL 167MHZ

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F512G08EMCBBJ5-6:B.001 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08EMCBBJ5-6:B.001
Integrated Circuits (ICs) - Memory - Memory MT29F512G08EMCBBJ5-6:B.001
IC FLASH 512GBIT PAR 132TBGA

IC FLASH 512GBIT PAR 132TBGA

Supplier's Site
Memory - MT29F512G08EMCBBJ5-6:B.001 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08EMCBBJ5-6:B.001
Memory MT29F512G08EMCBBJ5-6:B.001
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 167 MHz 132-TBGA (12x18)

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 167 MHz 132-TBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08EMCBBJ5-6:B.001 MT29F512G08EMCBBJ5-6:B.001 MT29F512G08EMCBBJ5-6:B.001
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71024S12Y - Lingto Electronic Limited
Rochester Electronics
Memory
71024S12Y
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
FIFOs Memory - SN74ACT7200L20NP - Quarktwin Technology Ltd.
Texas Instruments
FIFOs Memory
SN74ACT7200L20NP
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Density 2 kbits
Package Type DIP; 28-DIP (0.300\", 7.62mm)
View Details
Flash Memory - 1882769P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882769P
Specs
Memory Category Flash
Density 2048000 kbits
Package Type SOIC; SOIC
View Details
512MB Memory IC and Storage Component - 505-540276\512MB\32Mx16\8C\32 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
512MB Memory IC and Storage Component
540276\512MB\32Mx16\8C\32
View Details
2 suppliers