Micron Technology, Inc. Memory MT29F512G08EMCBBJ5-10:B

Description
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 100 MHz 132-TBGA (12x18)
  • Memory - MT29F512G08EMCBBJ5-10:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F512G08EMCBBJ5-10:B - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 100 MHz 132-TBGA (12x18)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F512G08EMCBBJ5-10:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08EMCBBJ5-10:B
Memory MT29F512G08EMCBBJ5-10:B
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 100 MHz 132-TBGA (12x18)

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 100 MHz 132-TBGA (12x18)

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Memory - MT29F512G08EMCBBJ5-10:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08EMCBBJ5-10:B
Memory MT29F512G08EMCBBJ5-10:B
IC FLASH 512GBIT PARALLEL 100MHZ

IC FLASH 512GBIT PARALLEL 100MHZ

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F512G08EMCBBJ5-10:B MT29F512G08EMCBBJ5-10:B
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
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2 suppliers