Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F512G08ELCDBG7-37ES:D TR

Description
IC FLASH 512GBIT PARALLEL 267MHZ
  • Memory - MT29F512G08ELCDBG7-37ES:D TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F512G08ELCDBG7-37ES:D TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 512GBIT PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08ELCDBG7-37ES:D TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08ELCDBG7-37ES:D TR
IC FLASH 512GBIT PARALLEL 267MHZ

IC FLASH 512GBIT PARALLEL 267MHZ

Supplier's Site
Memory - MT29F512G08ELCDBG7-37ES:D TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08ELCDBG7-37ES:D TR
Memory MT29F512G08ELCDBG7-37ES:D TR
IC FLASH 512GBIT PARALLEL 267MHZ

IC FLASH 512GBIT PARALLEL 267MHZ

Supplier's Site
Memory - MT29F512G08ELCDBG7-37ES:D TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08ELCDBG7-37ES:D TR
Memory MT29F512G08ELCDBG7-37ES:D TR
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 267 MHz

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 267 MHz

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08ELCDBG7-37ES:D TR MT29F512G08ELCDBG7-37ES:D TR MT29F512G08ELCDBG7-37ES:D TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
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