Micron Technology, Inc. Memory MT29F512G08ELCDBG7-37ES:D TR

Description
IC FLASH 512GBIT PARALLEL 267MHZ
Description
IC FLASH 512GBIT PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 512GBIT PARALLEL 267MHZ

IC FLASH 512GBIT PARALLEL 267MHZ

Supplier's Site
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 267 MHz

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 267 MHz

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08ELCDBG7-37ES:D TR
Integrated Circuits (ICs) - Memory - Memory MT29F512G08ELCDBG7-37ES:D TR
IC FLASH 512GBIT PARALLEL 267MHZ

IC FLASH 512GBIT PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08ELCDBG7-37ES:D TR MT29F512G08ELCDBG7-37ES:D TR MT29F512G08ELCDBG7-37ES:D TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

5V Memory IC and Storage Component - 774-MT5C2568C-25/883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Flash Memory - 1882561 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details