Micron Technology, Inc. Memory MT29F512G08EBHBFJ4-T:B TR

Description
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 132-VBGA (12x18)
Description
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 132-VBGA (12x18)

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 132-VBGA (12x18)

Buy Now
IC FLSH 512GBIT PARALLEL 132VBGA

IC FLSH 512GBIT PARALLEL 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory MT29F512G08EBHBFJ4-T:B TR
IC FLSH 512GBIT PARALLEL 132VBGA

IC FLSH 512GBIT PARALLEL 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08EBHBFJ4-T:B TR MT29F512G08EBHBFJ4-T:B TR MT29F512G08EBHBFJ4-T:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - Controllers - BQ2204ASN-NTR - Lingto Electronic Limited
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC
View Details
2 suppliers
SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - IS29GL01GS-11DHV013 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 110 ns
Density 1000000 kbits
View Details
2 suppliers
Memory - 71024S20YG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details