Micron Technology, Inc. Memory MT29F512G08EBHAFJ4-3ITFES:A

Description
IC FLASH 512GBIT PAR 132VBGA
Datasheet
Description
IC FLASH 512GBIT PAR 132VBGA
Datasheet

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Description
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IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site Datasheet
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 333 MHz 132-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29F512G08EBHAFJ4-3ITFES:A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F512G08EBHAFJ4-3ITFES:A
Integrated Circuits (ICs) - Memory - Memory MT29F512G08EBHAFJ4-3ITFES:A
IC FLASH 512GBIT PAR 132VBGA

IC FLASH 512GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08EBHAFJ4-3ITFES:A MT29F512G08EBHAFJ4-3ITFES:A MT29F512G08EBHAFJ4-3ITFES:A
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Density 512000000 kbits 512000000 kbits 512000000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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